Large-scale synthesis of two-dimensional indium telluride films for ...
2023年9月1日 · The crystallinity of the as-grown InTe films was investigated by using an X-ray diffraction (XRD) system (Rigaku smartlab, Japan) with Cu Kα radiation (λ = 1.5406 Å). …
Pressure evolutions of Raman spectrum of InTe (tetragonal …
We report high-pressure Raman scattering measurements on the tetragonal phase of InTe corroborated with the first-principles density functional theory and synchrotron x-ray diffraction...
Pressure induced band inversion, electronic and structural …
2018年4月27日 · We report high-pressure Raman scattering measurements on the tetragonal phase of InTe corroborated with the first-principles density functional theory and synchrotron x …
Large area growth of few-layer In2Te3 films by chemical vapor ...
2019年7月29日 · In this work we report a facile route to grow large area, uniform, continuous and few-layer α-In 2 Te 3 film via chemical vapor deposition (CVD) methods. The characterizations …
In-plane anisotropic Raman response of layered In
2021年5月7日 · This work presents a systematic study of phonon modes in Indium tellurides (In 2 Te 5), a member of Pentatelluride M 2 Te 5, where M = Al, Ga, and In, by Raman …
Crystallographic and μ-Raman analysis of InTe. (a ... - ResearchGate
InTe is a tetragonal semiconductor that crystallizes in the TlSe structure under ambient conditions [19]. It is best described by the tetragonal space group I4/mcm, with the unit cell [ Fig. 1...
Crystal structure and structural properties of InTe: (a) Crystal ...
We have then studied the anisotropy of InTe in detail by polarization-dependent Raman spectroscopy at λ = 532 nm laser excitation (room temperature). The intensity of Raman …
Direct observation of highly anisotropic electronic and optical …
2023年7月11日 · In this study, by combining angle-resolved photoemission spectroscopy and density functional theory calculations, we demonstrate the stability of InTe in the tetragonal …
Pressure induced band inversion, electronic and structural phase ...
In this work, we have systematically investigated the pressure-dependent behavior of InTe through the Raman scattering measurements and the first-principles calculations on InTe …
Vacancy modulation dramatically enhances the thermoelectric …
2025年3月1日 · Thermoelectric properties of InTe are successfully improved by reducing In + vacancies and single crystal orientation. Record-high power factor of 12.0 μW·cm −1 ·K −2 …