100V Single N-Channel Hi-Rel MOSFET in a TO-204AA package - A IRF130 with Hermetic Packaging. Infineon’s defense portfolio includes high reliability memories, power management and power conversion solutions for extreme operating environments.

The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability.

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

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The HEXFET® technology is the key to International Rectifier’s HiRel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on state resistance combined with high trans conductance. REF: MIL-PRF-19500/557.

IRF130 Infineon MOS管芯片中文资料PDF, 共(7)页, IRF130数据手册有芯片封装TO-204和参数资料, INFINEON IRF130 晶体管, MOSFET, N沟道, 14 A, 100 V, 180 mohm, 10 V, 4 V。

Description: N-CHANNEL POWER MOSFETS. Manufacturer: Samsung semiconductor.

IRF130 Description HEXFET® MOSFET technology is the key to IR Hirel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high trans conducta.

100V Single N-Channel Hi-Rel MOSFET in a TO-204AA package - A IRF130 with Hermetic Packaging. Benefits. Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

Download the IRF130 datasheet for detailed specifications and information on the IRF130 electronic component.