Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO …
IRFZ44NPBF_Infineon (英飞凌)_IRFZ44NPBF中文资料_PDF手册_价 …
下载IRFZ44NPBF中文资料、引脚图、Datasheet数据手册，有场效应管 (MOSFET)详细引脚图及功能的应用电路图电压和使用方法及教程。
IRFZ44N - Infineon Technologies
55 V Single N-Channel Power MOSFET in a TO-220 package. The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to …
IRFZ44 Datasheet (PDF) - NXP Semiconductors
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral …
accommodating die sizes up to HEX-4. It provides the highest power capability and lowest possible on-resistance i.
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
IRFZ44 MOSFETs | Vishay
Dynamic dV/dt rating175 °C operating temperaturePower MOSFET
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device featuresverylowon-stateresistance and has integral …
IRF44 Datasheet, PDF - Alldatasheet
Manufacturer: Samsung semiconductor. Description: N-CHANNEL POWER MOSFETS. 28 Results. Datasheet: 150Kb/5P. Manufacturer: Fairchild Semiconductor.