-100V Single P-Channel Power MOSFET in a TO-220 package.

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

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Vishay manufactures one of the world’s largest portfolios of discrete semiconductors and passive electronic components that are essential to innovative designs in the automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical markets.

IRF9520N Product details Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

IRF9520N HEXFET® Power MOSFET PD - 91521A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well

2024年10月17日 · The IRF9520N is designed with newer semiconductor processes, leading to enhancements in power efficiency, thermal performance, and switching speed. This makes it a preferred choice in applications that demand higher performance.

-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package. Unfortunately, your browser does not support embedded frames (iframes): You can view the embedded page here.

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

IRF9520NPBF International Rectifier P沟道MOS管芯片中文资料PDF, 共 (9)页, IRF9520NPBF数据手册有芯片封装TO-220-3和参数资料, P沟道,-100V,-6.8A,480mΩ@-10V。