200V Single N-Channel Power MOSFET in a TO-247 M series package.

IR MOSFETTM technology from Infineon utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area.

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下载IRFP250NPBF中文资料、引脚图、Datasheet数据手册，有场效应管 (MOSFET)详细引脚图及功能的应用电路图电压和使用方法及教程。

IRFP250NPBF是采用TO-247AC封装的200V单N沟道HEXFET功率MOSFET。 该MOSFET具有每硅面积极低的导通电阻、动态dv/dt额定值、易于并联、坚固、快速开关、简单的驱动要求和完全雪崩额定值，众所周知，功率MOSFET可提供极高的效率和可靠性，可以可用于各种应用。 立创商城IRFP250NPBF型号页面提供型号详细中文资料，PDF数据手册在线查看和下载,中文参数，引脚图，代替型号和在线购买等信息。 买IRFP250NPBF型号,上立创商城.

"IRFP250M是英飞凌（INFINEON）生产的一款HEXFET® Power MOSFET功率晶体管，主要用于高效率、高性能的电源管理领域。 这款芯片具有低导通电阻、快速开关速度和耐冲击设计的特点。

cription The IRFP250M utilizes the latest processing techniques to achieve low on-resistance per sili. on area. Additional features of this MOSFET are 150°C operating junction temperature and high repetitive peak current ca. ability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving appl.

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device cost-effectiveness. The TO-220AB package is universially preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices.

Description: N-CHANNEL 200V - 0.073ohm - 33A TO-247 PowerMesh II MOSFET. Manufacturer: STMicroelectronics.

IRFP250M International Rectifier 中文资料PDF, 共(8)页。