55V Single N-Channel Power MOSFET in a TO-220 package. Unfortunately, your browser does not support embedded frames (iframes): You can view the embedded page here.

Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

2021年3月21日 · IRFZ24N is an N channel TO-220 package transistor, this post describes IRFZ24N pinout, equivalent, applications and other important information about how and …

View IRFZ24N by NXP USA Inc. datasheet for technical specifications, dimensions and more at DigiKey.

N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device featuresverylowon-stateresistance and has integral …

accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- D 2 Pak TO-262. resistance in any existing surface mount package. The D2Pak is …

IRFZ24N Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. …

Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

The IRFZ24N is an N channel MOSFET with a TO-220 package. The transistor can be used in a wide range of general-purpose applications. The MOSFET has a high speed, low resistance, …

Part #: IRFZ24N. Description: Power MOSFET (Vdss=55V, Rds(on)=0.07ohm, Id=17A). File Size: 123.82 Kbytes. Manufacturer: International Rectifier.