
IRFZ44N - Infineon Technologies
55 V Single N-Channel Power MOSFET in a TO-220 package. The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universially preferred for commercial-industrial applications at power dissipation levels to approximately 50 W.
IRFZ44N,127 NXP USA Inc. | Discrete Semiconductor Products
Order today, ships today. IRFZ44N,127 – N-Channel 55 V 49A (Tc) 110W (Tc) Through Hole TO-220AB from NXP USA Inc.. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
IRFZ44Z - Infineon Technologies
55V Single N-Channel Power MOSFET in a TO-220 package. The StrongIRFET™ power MOSFET family is optimized for low R DS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness.
IRFZ44 Datasheet(PDF) - NXP Semiconductors
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode power supplies and general purpose switching applications. S-81378-Rev.
IRFZ44NPBF Infineon Technologies | Discrete Semiconductor …
IRFZ44NPBF – N-Channel 55 V 49A (Tc) 94W (Tc) Through Hole TO-220AB from Infineon Technologies. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
accommodating die sizes up to HEX-4. It provides the highest power capability and lowest possible on-resistance i.
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
IRFZ4 Datasheet, PDF - Alldatasheet
IRFZ4 Datasheet, PDF : Search Partnumber : Included a word "IRFZ4"-Total : 37 ( 1/2 Page) Manufacturer: Part No. Datasheet: Description: International Rectifier: AUIRFZ44N 179Kb / 11P: HEXFET짰 Power MOSFET Infineon Technologies A... AUIRFZ44N 325Kb / 9P: Advanced Planar Technology 2017-09-25: