55V Single N-Channel Power MOSFET in a TO-220 package.

IRFZ46 Product details Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, …

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction …

IRFZ46Z is a 55V single n-channel HEXFET power MOSFET in a TO-220AB package with 175°C operating temperature, produced in industry-leading quality.

Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

下载IRFZ46NPBF中文资料、引脚图、Datasheet数据手册，有场效应管 (MOSFET)详细引脚图及功能的应用电路图电压和使用方法及教程。

2023年1月12日 · N 通道功率 MOSFET 50A 至 59A，InfineonInfineon 的分立 HEXFET® 功率 MOSFET 系列包括表面安装和引线封装的 N 通道设备，外形可应对几乎任何板布局和热设计挑 …

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and …

HEXFET® Power MOSFET • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Ease of Paralleling • Simple Drive Requirements. VDSS= 50V. RDS(on) ID= 50*A. …