Indium-tin-oxide (ITO) nanorods (NRs) and nanowhiskers (NWhs) were fabricated by an electron-beam glancing-angle deposition (GLAD) system. These nanomaterials are of interests as...

ito 薄膜常应用在薄膜晶体管显示器( tft-lcd) 和光电器件领域,在显示器应用中提高了电场的效率稳定 性同时保证了显示屏透明度 [6-8] 。 然而 ito 薄膜也存在一些缺点,ito 薄膜由于含有稀有金属铟,制备成本

2024年1月2日 · We fabricate quantized ITO by using an approach that quickly prints ITO films from an In–Sn liquid alloy dropped on a SiO 2 substrate (thermally grown oxide or crystal quartz) at 200 °C.

2016年3月1日 · Indium tin oxide (ITO) is a well known n-type transparent conducting oxide material. Here tin acts as a cationic dopant in the In2 O 3 lattice and as a substitute on the indium sites to bind with the interstitial oxygen.

2023年6月16日 · In this study, Indium Tin Oxide (ITO) thin films are treated by infrared sub-picosecond Direct Laser Interference Patterning (DLIP) to modify the surface topography.

2016年11月18日 · The SEM image exhibits a drastic morphological change of the substrate and shows clearly the formation of craters and the presence of isolated ITO islands with a size ranged from 100 to 200 nm...

使用HITACHIGS4800 型扫描电子显微镜(SEM)分 别观测不同退火时间下ITO 薄膜的形貌,退火温度为450°C 时,退 火前后ITO 薄膜的表面微结构如图3 所示. 3 可以看出,经 高温退火后,ITO 薄膜层结构更加密实、均 匀,更 利于光的透过. 采用ThermoESCALABG250Xi型 XPS 能谱仪分析样品的化学成分,该 能谱仪的X 射线源为AlGKα,光斑大小为500μm,通 过能为30.0eV,能 源步长为0.1eV,真 空度为1×10-7Pa. 首先扫描全谱,扫描深度约为3nm,通 过C 结合能284.6eV 对全谱进行荷电校正,然 …

In this paper we report synthesis of highly conducting and optically transparent indium tin oxide (ITO) films with high charge carrier mobility using radio frequency (RF) magnetron sputtering...

2013年10月20日 · 文中探讨了在不同的沉积工艺参数条件下,利用离. 薄膜的表面形貌及晶体结构的变化。 薄膜。 实验采用霍尔源提供离子辅. 助,通过改变石英烘烤灯输出功率来调节基板温度,利用改变电子枪束流大小来控制膜料蒸发速率。 实验的本. 镀膜所用基片由红外玻璃. 利用乙醇及去离子水擦洗。 膜料为电子束蒸发用高纯度. 薄膜的晶体结构特性. 利用场发射扫描电子显微镜观察薄膜的表面形貌。 照片。 当基板温度较低 ( ),但薄膜表面粗糙,缺陷多,形貌变差。 观察图. 是存在细 …

Ultraviolet-visible spectrophotometer was used to characterize the film transmittance of the samples. The results show that both ITO and FTO films exhibit good optical transmittance. Scanning electron microscope (SEM) was used to observe the surface morphology of the films, and the surface of all the films was relatively uniform.