Description: High Voltage Fast-Switching NPN Power Transistor. Manufacturer: Fairchild Semiconductor.

13009由LGE (鲁光)设计生产，立创商城现货销售。 13009价格参考￥1.17。 LGE (鲁光) 13009参数名称：晶体管类型：NPN；集电极电流 (Ic)：12A；集射极击穿电压 (Vceo)：400V；直流电流增益 (hFE)：40@5A,5V；特征频率 (fT)：4MHz；集电极截止电流 (Icbo)：10uA；集射极饱和电压 (VCE (sat))：1V；工作温度：-55℃~+150℃。 下载13009中文资料、引脚图、Datasheet数据手册，有三极管 (BJT)详细引脚图及功能的应用电路图电压和使用方法及教程。

发射极与基极最高耐压（V EBO）： 9 V. 发射极与基极反向漏电流（I EBO）： 1000 μA. 特征频率（f T）： 4 MHz. 直流放大系数（h FE）： 8~40. 封装： TO-220.

Part #: J13009-2. Download. File Size: 48Kbytes. Page: 5 Pages. Description: High Voltage Switch Mode Application. Manufacturer: Fairchild Semiconductor.

2022年2月25日 · The FJP13009 is a 700V, 12A NPN silicon epitaxial planar transistor. The J13009 is available with mutiple hFE bin classes for ease of design use. The J13009 is designed for high speed switching applications which utilizes the industry standard TO-220 pacakge offering flexibility in design and excellent power dissipation.

High Switching Speed planar transistor. The FJPF13009 is available with multi-ple hFE bin classes for ease of design use. The FJPF13009 is designed for high speed switching applica-tions which utilizes the industry standard TO-220F pack- Electronic Ballast dissipation. 1. The affix “-H1, H2” means the hFE classification.

High Switching Speed nar transistor. The FJP13009 is available with multiple hFE bin classes for ease of design use. The FJP13009 is designed for high speed switching applications which uti-lizes the industry standard TO-220 package offering flex- Applications ibility in design and excellent power dissipation. 1.

J13009 Datasheet(HTML) 1 Page - Fairchild Semiconductor : zoom in zoom out 1 / 6 page ©2007 Fairchild Semiconductor Corporation. 1. www.fairchildsemi.com. FJP13009 Rev. B. March 2007. FJP13009. High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed

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三极管j13009和j13009-2有没有区别？ 唯一的一个区别就是电流放大倍数（hFE）不同。 J13009的电流放大倍数为 : 8 ~ 17；J13009-2 的电流放大倍数为: 15 ~ 28。