
Unique to the LME49810 is an internal Baker Clamp. This clamp insures that the amplifier output does not saturate when over driven. The resultant “soft clipping” of high level audio signals suppresses undesirable audio artifacts generated when conventional solid state amplifiers are driven hard into clipping.
LME49830是全互补双极型工艺生产的,具有56 mA (典型值)的输出电流、200V工作电压范围,为音频应用优化的输入级集成电路。 以56 mA的驱动电流,该器件可驱动多种大功率管,从而获得高 …
写给想玩或者还在关注甚至在玩国半LME49810的朋友,分享下个 …
2010年1月12日 · lme49810是美国国半公司推出的功率运算放大器,有点类似于它的前辈——lm4702。 它是一只高电压驱动IC,和 LM4702不同的是49810是一个声道,而4702是双声道,,使用这片集成电路,相对容易DIY出高性能的音频功率放大器。
200V单芯片驱动器LME49810的技术特点及适用范围 - 模拟技术
本文以美国国家半导体的音讯驱动器lme49810为例进行说明,该组件可提供200v的峰峰值输出电压摆幅,并可驱动不同类型的输出级,适合高阶消费和专业级音讯应用,包括主动录音室监视
HIFIDIY论坛-试玩6并LME49810 (不断跟新) - Powered by Discuz!
2014年12月12日 · 1、LME49810与功率级使用同一电源,但用二极管隔离,尽量减小大电流纹波串扰; 2、预推动级电阻由推荐值2.2K,改为1.5K,同时推动功率管更换为大功率管,NJW0281/0302G及2SK1085/J162可选; 3、Cc电容使用贴片及插件两种封装,我觉得贴片会更好; 4、Qmult管子采用三垦专用管2SC4495; 5、LME49810使用超大面积的散热片,这里主要是选用多叶片的散热片; 6、借鉴MBL8X的散热方式,功率管散热采用铝块,再与主散热片衔 …
LME49810 is the newest power op-amp from National Semiconductor. Similar to its predecessor, LM4702, it is a high-voltage power driver but in mono design. With this chip, constructing a high-performance power amplifier is rather simple. Compared to LM4702, the new chip has higher drive current, higher slew rate and Baker clamp.
The LME49810 is a high fidelity audio power amplifier driver designed for demanding consumer and pro-audio applica-tions. Amplifier output power may be scaled by changing the supply voltage and number of power transistors. The LME49810’s minimum output current is 50mA.
HIFIDIY论坛-【LME49810TB俱乐部】 之 玩尽 49810 - Powered by …
1 天前 · LME49810芯片是一款高度原音的单声道音频功率放大器驱动器,最适用于音响发烧友及专业级的音频系统。 LME49810内置优质、高性能功率放大器输出级驱动器所需的音频电路;可以输出50mA的电流;压摆率高达50V/us;电源抑制比 (PSRR)高达110dB;可在+/-20V至+/-100V的广阔电压范围内操作;内置先进的过热保护电路;采用15引脚的TO-247封装. LME49810芯片的独特之处是内置Baker钳位电路,可以确保放大器输出端在过驱动情况下也不会出现饱和现象, …
LME49810 Datasheet (PDF) - National Semiconductor (TI)
Description: 200V Audio Power Amplifier Driver with Baker Clamp. Manufacturer: National Semiconductor (TI).
In this report, the power supply and component values are presented. Amplifier bias optimization will be given. The bias pot was adjusted with THD and output spectrum monitored to find an optimum level. Followed are results of performance evaluation of the amplifier including THD, IMD and square wave test.
- 某些结果已被删除