2015年9月1日 · Partially amorphous AlN MBE grown low temperature (LT-) AlN as an in-situ surface passivation technique for III-nitride based high electron mobility transistors (HEMTs). Low DC‐RFDC–RF dispersion with gate lag and drain lag below 2% is …

2022年9月9日 · We report successful homoepitaxial growth of N-polar AlN by molecular beam epitaxy (MBE) on large-area, cost-effective N-polar AlN templates. Direct growth without any in situ surface cleaning leads to films with inverted Al polarity. It is found that Al-assisted cleaning before growth enables the epitaxial film to maintain N-polarity.

2022年6月29日 · We have investigated an Al modulation epitaxy (AME) method to obtain step-flow growth of Al droplet free AlN layers by plasma assisted molecular beam epitaxy (MBE). At the usual growth temperature of (Al)GaN/AlN heterostructures, Al atom migration and desorption rate are very low and consequently it is very difficult to avoid the formation of ...

2021年3月1日 · Single-crystal Aluminum Nitride (AlN) crystals enable the epitaxial growth of ultrawide bandgap Al(Ga)N alloys with drastically lower extended defect densities. Here, we report the plasma-MBE growth conditions for high Al-composition AlGaN alloys on …

mbe是通过分子束的直接冷凝来沉积超薄、高质量的aln薄膜。 为了生长AlN，通常的MBE机台会有两个效应器，一个效应器会装有纯铝，而另一个效应器则会提供氮源，当效应器被加热到足够的温度时，它会放出稳定流的分子。

已经研究了通过氨辅助分子束外延在具有不同低温 AlN 缓冲层 (LT-BL) 的 c 蓝宝石衬底上生长的 AlN 外延层特性（120 nm 厚）。LT-BL 对 AlN 结构和光学特性的作用作为 LT-BL 厚度和生长温度的函数进行了研究。

2013年8月1日 · Good crystalline quality of AlN/GaN/AlN heterostructures on Si (1 1 1) substrate has been successfully grown by plasma-assisted molecular beam epitaxy (MBE). The structural and optical properties of the thin film have been analyzed by HR-XRD, TEM, and EDS.

2014年5月29日 · This paper reports on AlN epilayers with improved crystalline quality grown on silicon-on-insulators (SOIs) by plasma-assisted molecular beam epitaxy (PAMBE). The influences of the substrate on threading dislocation (TD) and surface morphology have been investigated.

2023年6月11日 · In this paper, conventional continuous epitaxial growth and metal modulated epitaxial (MME) growth of AlN were investigated with the plasma-assisted molecular beam epitaxy (PA-MBE) system.

在初始阶段使用氨 MBE 生长高温 AlN/AlGaN 缓冲层可以提高结构质量并将 GaN 层中的位错密度降低到 9×108-1×109 cm-2。 然而，为了产生有效的 p 掺杂，以及生长含 In 层（InGaN，In 和 InAlN 含量高，晶格与 GaN 匹配），必须使用在低温下没有限制的方法 - 等离子体- 辅助 MBE。