Aug 29, 2017 · Here, we report layer-by-layer epitaxial growth of scalable transition-metal dichalocogenide (TMDC) thin films on insulating substrates by MBE and demonstrate ambipolar transistor operation. The proposed growth protocol is broadly applicable to other TMDCs, providing a key milestone toward fabrication of van der Waals heterostructures with ...

Jun 25, 2015 · In this work, we present a scanning tunneling microscopy and spectroscopy (STM/S) study of MBE-grown WSe 2 ML and BL, showing atomically flat epifilm with no domain boundary (DB) defect. This contrasts epitaxial MoSe 2 films grown by the same method, where a dense network of the DB defects is present.

Mar 28, 2025 · In the present paper, ultrathin films of WS 2 were grown on Al 2 O 3 using laser molecular beam epitaxy (LMBE). By applying our advanced 3D reciprocal space mapping technique, the presence of long-range order in the growing …

materials epitaxially using molecular-beam epitaxy (MBE). However, growths of monolayer (ML) and bilayer (BL) WSe 2 – an important member of the TMD family – by the MBE method remain uncharted probably because of the difficulty in generating tungsten fluxes from the elemental source. In this work, we present a

Jul 4, 2017 · 通过MBE生长，获得了MoS2、MoSe2、NbSe2以及异质的SnSe2/WSe2、MoSe2/Bi2Se3等2D的TMDCs。MBE联合扫描隧道显微镜、角分辨率光电子能谱等是进行2D-TMDCs制备和基础研究非常有用的手段，不过所获得薄膜的电学性能需要进一步提升。 4.2 化学气 …

MBE enables in-situ preparation of atomically clean substrates with specific surface reconstructions, facilitating the growth of highly epitaxial 2D films, but it can result in more defects...

2 inch full area coverage MoS2, MoSe2, WS2, WSe2 monolayers (few-layers are available on request) on 2 inch size c-cut sapphire substrates. CVD TMDs are all highly luminescent and Raman spectroscopy studies also confirm the monolayer thickness...

World's first molecular beam epitaxy (MBE) grown WS2 monolayers. MBE is an epitaxial method for single-crystal quality film deposition which offers high crystallinity and reduced defect density compared to chemical vapor deposition (CVD) or metal-organic chemical vapor deposition (MOCVD) techniques (see HRTEM images below).

Sep 22, 2017 · 在这项工作中，WSe2 的基本成核和生长行为通过详细的实验设计结合晶格上、基于扩散的第一原理动力学模型进行研究，以实现大面积 TMD 生长。 确定了三阶段吸附-扩散-附着机制，并揭示了吸附原子阶段在成核行为中起重要作用。 为了限制成核密度并促进二维层状生长，需要降低金属通量并提高衬底温度。 同时，提供富硒环境进一步限制了富钨原子核的形成，从而抑制了垂直生长并促进了二维生长。 迄今为止，通过这项研究获得的基本认识使 WSe2 的晶 …

World's first molecular beam epitaxy (MBE) grown MoS2 monolayers. MBE is an epitaxial method for single-crystal quality film deposition which offers high crystallinity and reduced defect density compared to chemical vapor deposition (CVD) or metal-organic chemical vapor deposition (MOCVD) techniques (see HRTEM images below).