This drawing documents the general requirements of a high performance gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 0.01 GHz to 10 GHz, low noise amplifier microcircuit, with an operating temperature range of -55°C to +125°C.

Microcircuit, Linear, GaAs, pHEMT, MMIC, 0.01 GHz to 10 GHz Low Noise Amplifier, Monolithic Silicon

RF & Microwave Products › Amplifiers ZX60-V62+ Connectorized SMA, Medium Power, Linear Amplifier, 50 MHz to 6000 MHz, 50Ω Connector Type: SMA Generic photo used for illustration purposes only. Connector types may vary. Please refer to datasheet for details. Ultra Flat Gain Broadband High Dynamic Range Wideband, 0.05 to 6 GHz Data, Drawings ...

This drawing documents the general requirements of a high performance gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 0.01 GHz to 10 GHz, low noise amplifier microcircuit, with an operating temperature range of -55°C to +125°C.

This drawing documents the general requirements of a high performance gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 0.01 GHz to 10 GHz, low noise amplifier microcircuit with an operating temperature range of -55°C to +125°C.

Scope. This drawing documents the general requirements of a high performance 0.01 GHz to 10 GHz, monolithic microwave integrated circuit (MMIC), gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT) radio frequency (RF) gain block microcircuit, with an operating temperature range of -55 C to +105 C.

This drawing documents the general requirements of a high performance 0.2 GHz to 8 GHz, gallium arsenide (GaAs), heterjunction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC), Divide by 8 Prescaler microcircuit, with an operating temperature range of …

V62/16609 DSCC图纸号 HMC434是一款低噪声、静态、8分频预分频器单芯片微波集成电路 (MMIC)，利用磷化铟镓/砷化镓 (InGaP/GaAs)异质结双极性晶体管 (HBT)技术，采用超小型6引脚SOT-23表贴封装。

DSCC-V62/19617 Microcircuit, Linear, GaAs, pHEMT, MMIC, 0.01 GHz to 10 GHz Low Noise Amplifier, Monolithic Silicon

This drawing documents the general requirements of a high performance gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 0.1 GHz to 6 GHz, 1 W power amplifier microcircuit with an operating temperature range of -55°C to +105°C.