We have demonstrated a new device called the Verical Replacement-Gate (VRG) MOSFET> This is the first MOSFET ever built in which: 1) all critical transistor dimensions are controlled precisely without lithography; 2) the gate length is defined by a deposited film thickness, independently of lithography and etch; and 3) a high-quality gate oxide ...

2002年7月1日 · We have fabricated and demonstrated a new device called the vertical replacement-gate (VRG) MOSFET. This is the first MOSFET ever built in which: (1) all critical transistor dimensions are controlled precisely without lithography and dry etch, (2) the gate length is defined by a deposited film thickness, independently of lithography and etch ...

2023年12月25日 · mosfet驱动电路设计是电子工程中一个关键的环节，尤其在高压、高频率的应用中，正确设计驱动电路对于确保mosfet的良好开关性能至关重要。 MOSFET （金属氧化物半导体场效应晶体管）的 驱动 电路分为隔离式和直接耦合式，...

We have fabricated and demonstrated a new device called the Vertical Replacement-Gate (VRG) MOSFET. This is the first MOSFET ever built that combines (1) a gate length controlled precisely through a deposited film thickness, independently of lithography and etch, and (2) a high-quality gate oxide grown on a single-crystal Si channel.

In this paper, we demonstrate a new device called the Vertical Replacement-Gate (VRG) MOSFET. This unique device retains these important planar MOSFET features, and in addition, provides precise gate length control without lithography, enhanced performance, and promising new opportunities for device design and continued scaling.

1999年2月1日 · We have fabricated and demonstrated a new device called the Vertical Replacement-Gate (VRG) MOSFET. This is the first MOSFET ever built that combines (1) a gate length controlled precisely...

Abstract: We present the first p-channel Vertical Replacement-Gate (VRG) MOSFETs. Like the VRG-nMOSFETs demonstrated last year, these devices show promise as a successor to planar MOSFETs for highly-scaled ULSI. Our pMOSFETs retain the key features of the nMOSFETs and add channel doping by ion implantation and raised source/drain extensions (SDEs).

1999年1月1日 · This is the first MOSFET ever built that combines (1) a physical gate length that is controlled precisely through a deposited film thickness independently of lithography and etch, and (2) a high-quality gate oxide that is grown on a single-crystal silicon channel.

We have fabricated and demonstrated a new device called the vertical replacement-gate (VRG) MOSFET. This is the first MOSFET ever built in which: (1) all critical transistor dimensions are controlled precisely without lithography and dry etch, (2) the gate length is defined by a deposited film thickness, independently of lithography and etch ...

Rg为 栅极驱动电阻，设驱动信号为12V峰值的方波。 Cgs为MOSFET栅源极电容，不同的管子及不同的驱动电压时会不一样，这儿取1nF。 VL+VRg+VCgs=12V. 令驱动电流. 得到关于Cgs上的驱动电压微分方程： 用 拉普拉斯变换 得到变换函数： 这是个3阶系统，当其极点为3个不同实根时是个 过阻尼震荡，有两个相同实根时是 临界阻尼震荡，当有虚根时是 欠阻尼震荡，此时会在MOSFET栅极产生上下震荡的波形，这是我们不希望看到的，因此栅极电阻Rg阻值的选择要 …