
MRF300AN|300 W CW, 1.8-250 MHz, 50 V | NXP Semiconductors
These devices, MRF300AN and MRF300BN, are designed for use in HF and VHF communications, industrial, scientific and medical (ISM) and broadcast and aerospace applications. The devices are extremely rugged and exhibit high performance up to 250 MHz. Quick reference to our documentation types. Quick reference to our design files types.
These devices are designed for use in HF and VHF communications, industrial, scientific and medical (ISM) and broadcast and aerospace applications. The devices are extremely rugged and exhibit high performance up to 250 MHz. Measured in 13.56 MHz reference circuit (page 5). Measured in 27 MHz reference circuit (page 10).
MRF300AN_300W CW, 1.8-250MHz, 50V | NXP 半导体
MRF300AN和MRF300BN这些设备适用于HF和VHF通信,工业、科学和医疗 (ISM)以及广播和航天应用。 这些设备非常耐用,最高性能达250MHz。 镜像引脚排列版本 (A和B),以简化推挽、双上配置中的使用。 快速参考恩智浦 文档类别. 快速参考恩智浦 设计文件类型. RF High Power Model ADS Model Kit goto: Click the Download button to select. RF High Power Model AWR Model Kit goto: Click the Download button to select. 您需要什么帮助?
MRF300AN Product Information|NXP
RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V. Data Sheet: PDF; All information for MRF300AN
MRF300AN NXP Semiconductors | Mouser - Mouser Electronics
3 天之前 · NXP MRF300 LDMOS transistors offer two opposite pin-connection versions (A and B) to be used in a push-pull and two-up configuration for wideband performance. These transistors are housed in an industry-standard TO-247 package, offering flexibility and ease of mounting.
MRF300AN NXP USA Inc. | Discrete Semiconductor Products
MRF300AN – RF Mosfet 50 V 27MHz ~ 250MHz 28dB 300W TO-247 from NXP USA Inc.. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
MRF300 LDMOS 600W HF/6M LINEAR AMPLIFIER 160-6M MRF300 …
A high power low loss wide band transmission line type TLT transformer are used in amplifier. T emperature regulated bias circuit. Parts color may different from photos depend on availability.
300 W CW over 1.8-250 MHz, 50 V Wideband RF Power LDMOS …
These devices, MRF300AN and MRF300BN, are designed for use in HF and VHF communications, industrial, scientific and medical (ISM) and broadcast and aerospace applications. The devices are extremely rugged and exhibit high performance up to 250 MHz. クイック・リファレンス ドキュメンテーションの種類. クイック・リファレンス 設計・ファイルの …
NXP Semiconductors MRF300 RF Power LDMOS Transistors
2018年6月19日 · NXP MRF300 LDMOS transistors offer two opposite pin-connection versions (A and B) to be used in a push-pull and two-up configuration for wideband performance. These transistors are housed in an industry-standard TO-247 …
MRF300AN-27MHZ NXP Semiconductors | Mouser - Mouser …
2025年3月15日 · NXP MRF300 Reference Circuits support the MRF300AN RF power LDMOS transistors by sharing the same PCB layout. These reference circuits enable RF designers to …