Atomic layer deposition (ALD) is a thin-film deposition technique based on the sequential use of a gas-phase chemical process; it is a subclass of chemical vapour deposition. The majority of ALD reactions use two chemicals called precursors (also called "reactants").

2014年6月1日 · Atomic layer deposition (ALD) is a vapor phase technique capable of producing thin films of a variety of materials. Based on sequential, self-limiting reactions, ALD offers exceptional conformality on high-aspect ratio structures, thickness control at the Angstrom level, and tunable film composition.

2019年10月31日 · Moreover, we give a comprehensive overview over metal ALD, ranging from a short summary of the early research on the ALD of the platinoid metals, which has meanwhile become an established technology, to very recent developments that target the ALD of electropositive metals.

2003年10月26日 · Atomic layer deposition (ALD) is a process for depositing highly uniform and conformal thin films by alternating exposures of a surface to vapours of two...

原子层沉积 (Atomic Layer Deposition, ALD)是一种基于化学气相沉积 (CVD) 的高精度薄膜沉积技术，是将物质材料以单原子膜的形式基于化学气相一层一层的沉积在衬底表面的技术。

2013年12月1日 · A primary goal of this review is to provide a unique reactivity-based perspective of metal ALD/pulsed-CVD. In addition, we have endeavoured to illustrate commonalities between solution-based and surface-based reactions relevant to metal deposition, and to highlight beneficial applications of the former to the development of the latter.

This review covers both scientific and technological parts related to the ALD of metal gates including the concept of effect work function, the material selection, the precursors for the deposition, the threshold voltage (Vt) tuning of the metal gate in contact with HfO2/SiO2/Si.

RACT: In this work, we report a new and promising approach towards the atomic layer deposition (ALD) of metallic Co thin films. Utilizing the simple and known CoCl2(TMEDA) (TMEDA = N,N,N’,N’-tetramethylethylenediamine) precursor in combina-tion with the intramolecularly stabilized Zn aminoalkyl compound Zn(DMP)2 (DMP = dimethylam.

2021年6月18日 · In this work, we report a new and promising approach toward the atomic layer deposition (ALD) of metallic Co thin films. Utilizing the simple and known CoCl2 (TMEDA) (TMEDA = N,N,N′,N′-tetramethylet...

Copper metal deposition processes are an essential tool for depositing interconnects used in microelectronic applications, giving group 11 (coinage metals: Copper, Silver, and Gold) an important place in atomic layer deposition (ALD) process development.