基于该类工艺的毫米波器件类型主要有高电子迁移率晶体管(hemt)、改性高电子迁移率晶体管(mhemt) 和异质结双极性晶体管(hbt)等.

HEMT transistors are able to operate at higher frequencies than ordinary transistors, up to millimeter wave frequencies, and are used in high-frequency products such as cell phones, satellite television receivers, voltage converters, and radar equipment.

35 nm mHEMT Technology for THz and ultra low noise applications Abstract: In this paper we present a very compact 0.28 × 0.55 mm 2 six-stage terahertz monolithic integrated circuit (TMIC) using 35 nm gate length metamorphic high electron mobility transistors (mHEMTs).

2019年10月1日 · MHEMTs are eminent among the transistors used for developing Terahertz imaging and sensing, radiometry, high resolution Radars, Collision avoidance Radars and Terahertz time domain spectroscopy. Heart of such high …

This paper reviews recent progress in the development of GaAs Metamorphic HEMT (MHEMT) technology for microwave, millimeter-wave, and submillimeter-wave applications. Short gate-length (50-100 nm) Metamorphic High Electron Mobility Transistors have been optimized for high gain and low noise performance.

2019年10月1日 · Following the introduction of metamorphic high electron mobility transistors (MHEMTs) 30 years back, there has been a rapid growth in their use in advanced MMIC (monolithic microwave integrated circuit) and TMIC (Terahertz monolithic integrated circuit) applications in sub-millimetre wave (S-MMW) and terahertz (THz) frequency regime.

2011年10月6日 · Two broadband very low-noise amplifiers operating in the frequency range from 4 to 12 GHz at cryogenic temperature are presented. The amplifier circuits have been developed using a 100 nm gate length InAlAs/InGaAs metamorphic high electron mobility transistor (mHEMT) technology.

HEMTs 和 PHEMTs 都是場效電晶體 (FET) 的一種變體，適用於單片微波積體電路 (MMIC) 的製造。 HEMT 和 PHEMT 結構將移動載流子與摻雜離子物理隔離，並防止光學聲子和離子化雜質造成潛在的散射問題。 讓我們深入瞭解一下 HEMTs 和 PHEMTs 的結構。 發明 HEMTs 的初衷是在室溫下的半導體元件中獲得高電子遷移率。 在 HEMTs 中用 AlxGa1-xAs/GaAs 量子阱異質結構實現的高電子遷移率迅速取代了無線通訊電路中的金屬半導體 FET (MESFET)，因為後者的電子遷移 …

2015年6月6日 · 从材料的层结构上 来说．MHEMT器件就是把InP系的InAlAs／InGaAs异质结结构搬移到GaAs村底上，使它不仅具有InP HEMT的高电子浓度，高迁移率和高饱和速度的优点，而且摆脱了InP衬底成本高、工艺加工时机械 强度低、易碎的缺点，是HEMT器件目前发展的最新方向。 但是．由于GaAs材料同lnAIAs／InGaAs 异质结晶格不匹配．所以如何解决这个问题成为MHEMT器件生长技术的关键。 本文所报道的是在中科院物理所提供的MHEMT 材料上，采用 …

Up to now, this frequency regime can be handled only by sub harmonic Schottky diode based mixers, but as demonstrated in this paper, metamorphic high electron mobility transistor (mHEMT) technology is becoming available.