洪伟教授前沿评述：毫米波与太赫兹技术 - 知乎
基于该类工艺的毫米波器件类型主要有高电子迁移率晶体管(hemt)、改性高电子迁移率晶体管(mhemt) 和异质结双极性晶体管(hbt)等.
High-electron-mobility transistor - Wikipedia
HEMT transistors are able to operate at higher frequencies than ordinary transistors, up to millimeter wave frequencies, and are used in high-frequency products such as cell phones, …
35 nm mHEMT Technology for THz and ultra low noise applications
35 nm mHEMT Technology for THz and ultra low noise applications Abstract: In this paper we present a very compact 0.28 × 0.55 mm 2 six-stage terahertz monolithic integrated circuit …
GaAs metamorphic high electron mobility transistors for future …
Oct 1, 2019 · MHEMTs are eminent among the transistors used for developing Terahertz imaging and sensing, radiometry, high resolution Radars, Collision avoidance Radars and Terahertz …
Metamorphic HEMT Technology for Microwave, Millimeter …
This paper reviews recent progress in the development of GaAs Metamorphic HEMT (MHEMT) technology for microwave, millimeter-wave, and submillimeter-wave applications. Short gate …
GaAs metamorphic high electron mobility transistors for future …
Oct 1, 2019 · Following the introduction of metamorphic high electron mobility transistors (MHEMTs) 30 years back, there has been a rapid growth in their use in advanced MMIC …
Cryogenic Low-Noise mHEMT-Based MMIC Amplifiers for …
Oct 6, 2011 · Two broadband very low-noise amplifiers operating in the frequency range from 4 to 12 GHz at cryogenic temperature are presented. The amplifier circuits have been developed …
利用 HEMT 和 PHEMT 改善無線通訊電路中的增益、速度和雜訊
HEMTs 和 PHEMTs 都是場效電晶體 (FET) 的一種變體，適用於單片微波積體電路 (MMIC) 的製造。 HEMT 和 PHEMT 結構將移動載流子與摻雜離子物理隔離，並防止光學聲子和離子化雜質 …
MBE生长的MHEMT器件的基本的研究 - 豆丁网
Jun 6, 2015 · 从材料的层结构上 来说．MHEMT器件就是把InP系的InAlAs／InGaAs异质结结构搬移到GaAs村底上，使它不仅具有InP HEMT的高电子浓度，高迁移率和高饱和速度的优点，而 …
Up to now, this frequency regime can be handled only by sub harmonic Schottky diode based mixers, but as demonstrated in this paper, metamorphic high electron mobility transistor …
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