1978年1月1日 · Only cadmium chalcogenides show a little solubility in MnBVI compounds. Cadmium (S, Se) and (Te) exhibit the rock salt and Nias structure MnVI compounds, …

By using the LDA + U method, we have investigated the electronic structure of MnBVI (BVI = S, Se, Te)–which are end-point materials for wide gap semiconductors, A1−xIIMnxBVI (AII = Zn, …

2004年6月1日 · By using the LDA + U method, we have investigated the electronic structure of MnBVI (BVI = S, Se, Te)–which are end‐point materials for wide gap semiconductors, …

2004年6月1日 · By using the LDA + U method, we have investigated the electronic structure of MnBVI (BVI = S, Se, Te)–which are end-point materials for wide gap semiconductors, …

By using the LDA + U method, we have investigated the electronic structure of MnB VI (B VI = S, Se, Te)-which are end-point materials for wide gap semiconductors, A 1-xII Mn x B VI (A II = …

We review the physical properties of diluted magnetic semiconductors (DMS) of the type AII1−xMnxBVI (e.g., Cd1−xMnxSe, Hg1−xMnxTe). Crystallographic properties are discussed …

diluted magnetic semiconductors (DMS) as derived within an "effective" one electron framework. The major portion of these notes focuses on the prototypical case of Ai~,.Mn,.BvI DMS in …

Only cadmium chalcogenides show a little solubility in MnBVI compounds. Cadmium (S, Se) and (Te) exhibit the rock salt and Nias structure MnVI compounds, respectively. The crystal growth …

1978年1月1日 · Only cadmium chalcogenides show a little solubility in MnBVI compounds. Cadmium (S, Se) and (Te) exhibit the rock salt and Nias structure MnVI compounds, …

By using the LDA + U method, we have investigated the electronic structure of MnBVI (BVI = S, Se, Te)–which are end-point materials for wide gap semiconductors, A1−xIIMnxBVI (AII = Zn, …