2021年1月29日 · Here we benchmark device-to-device variation in field-effect transistors (FETs) based on monolayer MoS 2 and WS 2 films grown using metal-organic chemical vapor deposition process. Our study...

Atomically thin molybdenum disulfide (MoS 2) is an ideal semiconductor material for field-effect transistors (FETs) with sub-10 nm channel lengths. The high effective mass and large bandgap of MoS 2 minimize direct source–drain tunneling, while its atomically thin body maximizes the gate modulation efficiency in ultrashort-channel transistors.

2019年2月19日 · Here we fabricate CVD-grown large-area MoS 2 field-effect transistors (FETs) by photolithography and demonstrate their potential as switching and driving FETs for pixels in analog organic...

2024年3月15日 · Here, we report MoS 2 field-effect transistors (FETs) with top/bottom hexagonal boron nitride (h-BN) encapsulation and graphene electrodes.

2020年12月4日 · Here, we present an atomic threshold-switching MoS 2 FET (ATS-FET) with sharp on/off switching properties and ultralow energy consumption. The ATS-FET is endowed with an abrupt amplification...

2015年2月13日 · In this review, an overview on advances and developments in the MoS2-based FETs are presented. Engineering of MoS2-based FETs will be discussed in details for understanding contact physics, formation of gate dielectric, and doping strategies.

2024年2月7日 · In this study, we addressed a thickness-modulated n/p + -homojunction prepared from Nb-doped p + -MoS 2 crystal, where the issue on interface traps can be neglected without any external interface control due to the homojunction. Notably, our observations reveal the existence of a negative differential resistance, even at room temperature (RT).

5 天之前 · Compared with undoped one, the FET's current on/off ratio improved from 5×102 to 105, and the field-effect mobility increased from 0.093 cm2/V·s to 16.05 cm2/V·s It indicated Cu doping of MoS2 thin films effectively enhanced their conductivity and field-effect mobility.

2019年7月2日 · In this study, we propose a large-scale highly electron-doped graphene contact platform of monolayer MoS 2 for reliable Ohmic contacts and Fermi level alignment. We demonstrate monolayer MoS 2 FETs using nitrogen-doped graphene (NGr) with barrier-free Ohmic contact, instead of the pristine graphene contact platforms that were previously used.

2024年4月10日 · Abstract: In this work, we explore the 3-D integration of single layer (SL) and bilayer (BL) MoS2 in stacked gate-all-around (GAA) nanosheet field-effect transistor (NS-FET) using fully calibrated TCAD simulation for the future technology node.