2019年4月16日 · Here, by combining first-principles calculations and experimental studies, we report on the discovery of robust room-temperature out-of-plane ferroelectricity which is realized in the thinnest...

2022年7月16日 · In this paper, we investigate a single layer of 2 H -MoTe 2 grown on graphene by MBE and we present scanning tunneling microscopy (STM) investigations combined with density functional theory...

2016年2月12日 · Here we show that the semiconductor-to-semimetal phase transition in monolayer MoTe 2 can be driven by a gate voltage of several volts with appropriate choice of dielectric. We find that the...

1996年5月15日 · To get a better understanding of the STM images of TMD surfaces we investigated c~-MoTe2, /3- MoTe2 and WTe2 (001) surfaces by AFM and STM. c~- and /3-MoTe2 have been chosen because of their chemically identical but structurally different nature [6,7].

2023年8月25日 · In this work, we report on the observation of interface-enhanced superconductivity in monolayer 1T′-MoTe 2 film grown on the STO (001) substrate by molecular beam epitaxy (MBE).

STM topographic image of the MoTe2 sample after postannealing of an epitaxially grown monolayer on a HOPG substrate at ~ 513K. The accompanying STM current image (Fig. 1b) clearly manifests...

2018年6月1日 · 2H- and - phase monolayer MoTe2 films on highly oriented pyrolytic graphite are studied using scanning tunneling microscopy and spectroscopy (STM/STS). The phase transition of MoTe2 can be controlled by a post-growth annealing process, and the intermediate state during the phase transition is directly observed by STM.

Micro-focused angle-resolved photoemission spectroscopy (μ-ARPES) and low-temperature scanning tunneling microscopy (STM) in collaboration with first-principles band-structure calculations have revealed that this new 1T-MoTe 2 phase is realized by the band reconstruction due to the moiré potential formed between MoTe 2 and BL-graphene.

2023年12月19日 · Here, we demonstrate the epitaxial growth of 1T'-MoTe 2 on Au (111) and graphitized silicon carbide (Gr/SiC) by molecular beam epitaxy (MBE). We investigated the morphology of the grown 1T'-MoTe 2 at the atomic level by scanning tunnelling microscopy (STM) and revealed the corresponding microscopic growth mechanism.

We introduce the systematic database of scanning tunneling microscope (STM) images obtained using density functional theory (DFT) for two-dimensional (2D) materials, calculated using the...