2017年11月4日 · N-channel asymmetrical planar epitaxial junction Field-Effect Transistor in a SOT23 package.

N-channel asymmetrical planar epitaxial junction Field-Effect Transistor in a SOT23 package.

Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and thin-film circuits. …

This page contains information on a product that is not recommended for new designs. N-channel asymmetrical planar epitaxial junction Field-Effect Transistor in a SOT23 package. Part …

来自 NXP USA Inc. 的 BF511,215 – RF Mosfet 10 V 5 mA 100MHz SOT-23（TO-236AB）。 DigiKey 提供数以百万计电子元器件的定价和供应信息。

NXP USA Inc. 的 BF511,215 – RF Mosfet 100MHz 10 V 5 mA SOT-23 (TO-236AB)。 DigiKey 提供數百萬款電子元件的價格及供貨情況。

Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and thin-film circuits. …

BF511,215 NXP Semiconductors 射频结栅场效应晶体管(RF JFET)晶体管 JFET N-CH 20V 10MA 数据表, 库存, 价格. 跳到主内容 免费电话: 400-821-6111

bf511：n沟道硅fet. n沟道非对称平面外延结型场效应晶体管，采用sot23封装。

N-channel asymmetrical planar epitaxial junction Field-Effect Transistor in a SOT23 package. プレスリリース |.