6 天之前 · On September 29, 2020, NXP opened the RF Gallium Nitride (GaN) 150 mm (6-inch) wafer size fab in Chandler, Arizona. This fab combines NXP’s expertise as the industry leader in RF power and its high-volume manufacturing know-how to advance 5G base stations and communication infrastructure in the industrial, aerospace and defense markets.

2025年3月24日 · On September 29, 2020, NXP opened the RF Gallium Nitride (GaN) 150 mm (6-inch) wafer size fab in Chandler, Arizona. This fab combines NXP’s expertise as the industry leader in RF power and its high-volume manufacturing know-how, resulting in streamlined innovation that supports the expansion of 5G base stations and advanced communication ...

2020年9月29日 · NXP is leading 5G cellular infrastructure expansion with the new 150 mm (6”) fab and its 20 years of GaN development expertise focused on power density, gain and linearized efficiency. State-of-the-art fab will serve as a hub enabling NXP to innovate faster with strong collaboration between the new internal factory and NXP’s R&D team based ...

2024年8月5日 · Chandler is now home to two of NXP’s five front-end fabs, delivering some of our most important products and technologies. As well as the Chandler Fab, we also have the world’s most advanced RF Gallium Nitride (GaN) fab, the ECHO fab, opened in 2020. 30 Years Chandler: Absolutely Fab. Watch the video to relive the celebration .

2020年10月2日 · NXP this week opened its own new 150mm (6-inch) GaN fab built in Arizona to focus primarily on the communications infrastructure market for 5G radio systems and with technology migration to future 6G in mind.

2024年6月5日 · VIS and NXP have agreed to contribute an additional $1.9 billion which will be utilized to support the long-term capacity infrastructure. The remaining funding including loans will be provided by third parties to the joint venture. The fab will be operated by VIS.

NXP’s 150 mm GaN Wafer Fab — Most Advanced RF GaN Fab in the US N XP, the world’s largest supplier of LDMOS power transistors for cellular infrastructure, has built and qualified a 150 mm wafer fab to produce its GaN on SiC power transistors. The $100 million invest-ment in a dedicated GaN wafer fab in Chandler, Arizona,

On September 29, 2020, NXP opened the RF Gallium Nitride (GaN) 150 mm (6-inch) wafer size fab in Chandler, Arizona. This fab combines NXP’s expertise as the industry leader in RF power and its high-volume manufacturing know-how, resulting in streamlined innovation that supports the expansion of 5G base stations and advanced communication ...

2020年9月30日 · NXP Semiconductors has officially opened its new 150 mm (6-inch) RF Gallium Nitride (GaN) fab in Chandler, Arizona. This highly advanced fab is dedicated to supporting 5G RF power amplifier development in the United States.

Visit NXP’s new GaN Fab in Chandler, Arizona. This manufacturing facility is the most advanced GaN Fab for RF in the U.S. Follow NXP's fab manager Geno Fallico as he takes you on a tour. For more information, please visit: http://www.nxp.com/RFGaN