NIMS Fellow, Project Leader of the Quantum Materials Project Dr. Takashi Taniguchi is renowned for high-pressure synthesis of hBN (hexagonal boron nitride) crystals, a key material in nanotechnology research.

By using hBN for the substrate of graphene, the electrical conduction properties of the graphene improved significantly, and its mobility reached almost one-order higher than that of the conventional SiO2 substrate device and quantum electronic correlation effects such as fractional quantum Hall effect rushed to observed in the graphene layers ...

一方、六方晶系に属する六方晶窒化ホウ素（h-BN）は、窒素とホウ素原子が強いsp2結合による平面原子層を形成し、それが弱く層状に重なることによりなる層状化合物です。 この層状構造に起因して、h-BNは変形しやすい柔らかい物質です。 私たちは、これまで世界で誰も気がつかなかったような窒化ホウ素および関連物質の新しい側面を研究しています。 左のリンクWORKで最近の私たちの成果を紹介します。 また、GALLERYには結晶や装置などいろいろな写真を置 …

2020年1月7日 · 里面剩下嵌着的是闪耀的、透明的、毫米大小的晶体，这种晶体叫做六方氮化硼（hBN）。 世界上所有的材料实验室都想要Taniguchi和Watanabe在东京外筑波国家材料科学研究所（NIMS）绿树环绕园区内尖端科技实验室里制作的东西。

2025年3月21日 · This approach yields the purest hBN crystals among the fabrication methods mentioned above. Most notably, bulk hBN fabricated by Taniguchi, Watanabe, and co-workers at the National Institute for Materials Science (NIMS) Japan, is widely regarded as the highest quality hBN to date and used for heterostructures in 2D devices around the world.

六方晶窒化ホウ素（hBN）は窒素とホウ素からなる黒鉛類似の結晶構造を持つ化合物（図1）であり、化学的・熱的安定性に優れ断熱材や絶縁体、あるいはその機械的性質から摺動材料として実用に供されている。

This work demonstrates the novel concept of a mixed-dimensional reconfigurable field effect transistor (RFET) by combining a one-dimensional (1D) channel material like a silicon (Si) nanowire with a two-dimensional (2D) material as a gate dielectric.

2019年8月21日 · Kenji Watanabe prepares hexagonal boron nitride (hBN) crystals (left); stacks of plastic trays holding hBN pile up for posting around the world. Credit: Mark Zastrow

We focus on quantum emitters in two-dimensional hexagonal boron nitride (hBN), known for their unique photophysical properties and promising applications in quantum computing and communications. Despite the wide range of emission energies from hBN defects, identifying and modulating specific emitters remain challenging.

Dr. Takashi Taniguchi is renowned for high-pressure synthesis of hBN (hexagonal boron nitride) crystals, a key material in nanotechnology research.