P2N2222A/D P2N2222A Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices* MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Unit Collector−Emitter Voltage VCEO 40 Vdc Collector−Base Voltage VCBO 75 Vdc Emitter−Base Voltage VEBO 6.0 Vdc Collector Current − Continuous IC 600 mAdc

The NPN Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the TO-92 package, which is designed for medium power applications. Product services, tools and other useful resources related to P2N2222A. If you wish to buy products or product samples, please log in to your onsemi account. I C Cont. (A)

p2n2222a http://onsemi.com 6 package dimensions to−92 (to−226) case 29−11 issue am notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section x−x v ...

P2N2222A – Bipolar (BJT) Transistor NPN 40 V 600 mA 300MHz 625 mW Through Hole TO-92 (TO-226) from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

View P2N2222A by onsemi datasheet for technical specifications, dimensions and more at DigiKey.

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View datasheets for P2N2222A by ON Semiconductor and other related components here.

Semiconductor Components Industries, LLC, 2000 November, 2000 – Rev. 0 1 Publication Order Number: PN2222/D PN2222, PN2222A PN2222A is a Preferred Device

P2N2222A/D P2N2222A Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Unit Collector−Emitter Voltage VCEO 40 Vdc Collector−Base Voltage VCBO 75 Vdc Emitter−Base Voltage VEBO 6.0 Vdc Collector Current − Continuous IC 600 mAdc