2023年2月21日 · We investigate by modeling supported by experiments the role of oxygen in carbon nanotubes (CNT) growth by plasma enhanced chemical vapor deposition (PECVD) process. We found that a suitable content of molecular oxygen in a H2/CH4 mixture can significantly increase the vertical CNT growth rate.

2018年9月30日 · Previous studies have shown a large difference in CNT growth by using PECVD depending on the choice of Fe or Ni catalyst. It was easier to obtain high (several micrometers) CNT carpets with Fe catalyst even at process temperature as low as 550 °C.

主要的三种技术如下：（1）电弧放电技术，（2）激光烧蚀技术，（3）化学气相沉积（cvd）技术。等离子体增强化学气相沉积（pecvd）是生长cnt的最佳替代方法，是化学气相沉积（cvd）的最佳，最改良方法。在该技术中，cnt的生长在低温下存在等离子体的情况下

2012年10月25日 · For these applications the Plasma Enhanced Chemical Vapor Deposition (PECVD) seems to be the most promising thanks to the vertical growth of CNT, the easy control of site density and location through particle catalysis prior to CNT growth and its relatively low temperature synthesis (around 500–700 °C) compared to other methods (CVD) [4].

2003年4月2日 · Recently, plasma enhanced chemical vapour deposition (PECVD) has emerged as a key growth technique to produce vertically-aligned nanotubes. This paper reviews various plasma sources currently used in CNT growth, catalyst preparation and growth results.

最近，等离子体增强化学气相沉积 (PECVD) 已成为生产垂直排列的纳米管的关键生长技术。 本文综述了目前用于 CNT 生长、催化剂制备和生长结果的各种等离子体源。 由于该技术处于早期阶段，人们普遍缺乏对生长机制、等离子体本身的作用以及负责生长的关键物种的身份的了解。 这篇综述针对的是低温等离子体研究界，他们通过等离子体和表面诊断和建模，在半导体加工和金刚石薄膜生长中成功地解决了这些问题。 碳纳米管 (CNT) 由于其独特的电子和非凡的机械性能，在 …

2022年4月28日 · In this work, we study the influence of the CNT growth temperature and the thickness of the catalytic layer on the geometric and structural parameters of carbon nanotubes grown by the PECVD method and check their potential applicability for creating nanopiezotronic devices (nanogenerators, energy nanoharvesters).

Plasma-Enhanced Chemical Vapor Deposition (PECVD) is utilized since it allows the growth of oriented multi-wall CNT. A cleaned substrate (primarily silicon) is coated with a metal that has been shown to act as a catalyst for CNT growth, such as Ni, Fe, Co, using various deposition methods (evaporation, sputtering, etc.).

2018年9月1日 · 研究了通过在暴露于 H2:C2H4 等离子体之前使用 H2 等离子体预先减小 Ni 颗粒的尺寸来改善 Ni/TiN/SiO2/Si 上的 CNT 地毯生长。 结合不同的技术，SEM、原位拉曼、NEXAFS、XPS 和 TEM 来研究 CNT 薄膜的生长速率和质量。

2021年8月31日 · Plasma enhanced chemical vapor deposition (PECVD) technique is successfully employed for the controlled synthesis of CNT and graphene [12–26] as it offers low temperature growth, better alignment and good deposition rates. The growth of nanostructures in a PECVD process takes place on the surfaces affected by the species crossing the plasma ...