Refractive index – why is it important in PECVD? Refractive index is a good indicator of film composition, i.e. Si:N ratio or Si:O ratio. It can be easily measured by ellipsometer or prism coupler, allowing rapid evaluation of film composition (and unifomrity of composition).

2013年6月1日 · Mechanical properties and corrosion resistance of Si 3 N 4 films are studied by using different experiment parameters, such as plasma enhanced chemical vapor deposition (PECVD)RF power, ratio of reaction gas, reaction pressure and working temperature.

2013年3月5日 · In this work, we investigate how the film properties of silicon nitride (SiN x) depend on its deposition conditions when formed by plasma enhanced chemical vapour deposition (PECVD).

Unaxis solutions for plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (SiNx) are used extensively in the production of GaAs devices. PECVD is compatible with the low temperature constraints required for GaAs device manufac-turing. With this technique, high quality SiNx can be deposited at temperatures less than 400°C.

Hydrogenated silicon nitride (SiN:H) thin films play an important functional role in modern crystalline solar cell manufacturing. The refractive index of the SiN:H films can be matched to the underlying substrate as an anti-reflecting coating (ARC) to …

2022年12月20日 · Low-temperature silicon nitride (SiN x) films deposited by plasma-enhanced chemical vapor deposition (PECVD) are one of the most common encapsulation materials for flexible organic light-emitting device and insulation layer in flexible touch panel [1, 2].

Silicon nitride (SiN) platforms have shown remarkable properties and, aided by hybrid and heterogeneous integration techniques of III-V materials, can streamline the development of compact applications in telecommunication, sensing and metrology. A few of the most promising applications can profit from the availability of low loss waveguides [1].

2025年3月17日 · Low-Stress SiN 3xTime (PECVD #2) This Low-Stress SiN recipe is more stable over time (months), because each step is 3x longer (so each compressive/tensile layer is thicker), making it less susceptible to RF ignition delays as the grounding strap is etched over time. – 2024-09 Demis & Biljana. Recipe: "STD LS-Si3N4 3xTime v1"

Plasma enhanced chemical vapor deposition (PECVD) SiN is commonly used to passivate surface states in AlGaN/GaN HEMTs. Previously, a bi-layer PECVD SiN passivation scheme had been developed to improve the dynamic on-resistance when compared to a conventional mixed frequency PECVD SiN [1].

2024年6月16日 · This work focusses on the development of CMOS compatible SiN processes for visible (VIS) and infrared (IR) applications in a 300 mm industry standard clean room. By utilizing PECVD for SiN deposition and RTA for annealing, hydrogen-related bonds were eliminated to reduce IR absorption.