IPUMS PMA harmonizes the Performance Monitoring for Action (PMA) data series (it was formerly known as Performance Monitoring and Accountability 2020 - PMA2020). It provides an interactive web dissemination system for PMA data with variable documentation on thousands of harmonized variables on reproductive and sexual health, family planning ...

2000年1月1日 · PMA generates frequent, high-quality surveys monitoring key health indicators in nine countries in Africa and Asia. Data is available open-source for research, program planning, and policy-making.

The Performance Monitoring for Action (PMA) project is fueling a data revolution to guide family planning programs. Data are key to informing and driving policy and program changes around the world.

Post metallization annealing (PMA) is used to reduce the defects at the interface, such as fixed oxide charges, oxide trapped charges, and interface charges [5]. Previous work has demonstrated that oxygen vacancies can be passivated for device with noble metal gate by oxygen diffusion through the gate metal [6].

In this work, the influence of high- k /metal gate (HKMG) thermal processes such as post dielectric annealing (PDA), post metal annealing (PMA), and post amorphous Si cap annealing (PCA) on metal boundary effect (MBE) in FinFET is investigated. It is revealed that the PDA temperature increase leads to more severe MBE.

2025年1月28日 · Discover how PMA Ethiopia data has informed evidence-based decisions in maternal, neonatal, and sexual and reproductive health and rights (SRHR). Reflect on the project’s successes in strengthening local capacity. Explore actionable insights to enhance future monitoring efforts and global health initiatives.

Abstract: A two-step post-metallization annealing (PMA) process has been developed and it has demonstrated its significant benefit for high-k metal gate (HKMG) in reducing post chemical mechanical polish (CMP) Al corrosion defects.

As the leading gateway for waterborne trade with Asia, West Coast ports play a vital role in the national and global economies.

2022年4月1日 · In this paper, impacts of post metallization annealing (PMA) temperatures on interfacial and electrical properties of Ge n-channel metal–oxidesemiconductor field-effect transistors (nMOSFETs) with ZrO 2 /Al 2 O 3 /GeO x /Ge gate stacks employing post-oxidation passivation are systematically evaluated.

The document announces a GATE 2023 booster series from the Pure Mathematical Academy with important questions and predicted concepts. It states that the complete solution will be available tomorrow, February 2nd, 2023 at 7:00 pm on the academy's new YouTube channel, and provides various answer keys and a link to visit the solutions video directly.