2022年5月15日 · In this paper, we integrated a proton-selective membrane (PSM)-deposited dual-gate ion-sensitive field-effect transistor (DG-ISFET) with a microchamber-embedded filter membrane to perform bacterial enrichment and incubation followed by on-chip AST.

The key components of optimization are finding the best NA and sigma, the optimum bias for isolated lines and dense lines and the optimum transmission of att PSM. Then, the impacts of some critical lithographic parameters such as phase error effects in APSM, proximity effects and mask error factor (MEF) were determined with experimental data.

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2000年7月5日 · Simulations indicate high transmission attenuated phase shift mask to improve resolution, reduce line end shortening, corner rounding and provide process window enhancements for some pitches. They...

PSM在 stata 的实现过程。 首先，如果自变量是连续变量，需要转换为二元离散变量，比如自变量是企业R&D投入，你需要找到一个临界值，把R&D投入分为高R&D投入组和低R&D投入组，临界值包括：平均数，上下三分位数，及其他分位数等，没有明确规定。

2000年1月1日 · The combination of optical proximity correction (OPC) and PSM generation for two-mask design is proposed, where a dark-field PSM is used to define the poly-gate and a clear-field binary mask...

2000年7月5日 · For lithography smaller that 180 nm using 248 nm steppers, phase-shifting lithography is becoming more routine. However, when applied to very small dimensions, OPC effects begin to become pronounced. We have design a new phase- shifting test structure for reticles to address these phase shifting distortions, and report on its use.

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2024年11月27日 · PSM（Power Saving Mode）技术 是一种用于 无线通信设备 （特别是在物联网和移动网络中）节能的技术。 它旨在通过减少设备的工作时间来延长设备的电池寿命，特别适用于需要长时间运行的低功耗设备，如物联网（IoT）设备、传感器、智能表计等。

2000年7月5日 · For lithography smaller that 180 nm using 248 nm steppers, phase-shifting lithography is becoming more routine. However, when applied to very small dimensions, OPC effects begin to become pronounced.