Atomic structure and defect dynamics of monolayer lead iodide …
2020年2月10日 · We used annular dark-field scanning transmission electron microscopy (ADF-STEM) to studying the PbI 2 atomic structure, by depositing it from solution onto a suspended …
PbI2‐DMSO Assisted In Situ Growth of Perovskite Wafers for …
2022年11月13日 · The enhanced µτ products of PbI 2-DMSO assisted MAPbI 3 wafers stem from the DMSO vapor that facilities in situ growth of MAPbI 3 with high crystallinity, large grain size, …
ADF-STEM images of PbI2 grown on silicon oxide support grids …
PbI2 crystals of diameter primarily between 200-400 nm are observed, which agrees well with the diameters from SEM images of 81 cycles of PbI2. ... View in full-text Context 3
碘化铅(PbI2)薄膜的生长机制及表征(图文并茂)-UDP糖丨MOF丨金 …
2021年7月13日 · 通过块材晶体机械剥离或物理气相沉积合成的微米级薄片已经显示出大量应用，从室温下的低阈值激射到具有大响应率和更快响应的高性能光电探测器。 然而，具有良好 …
Pb clustering and PbI2 nanofragmentation during …
2019年5月16日 · Here we report that, in a polycrystalline MAPbI 3 layer, Pb-related defects aggregate into nanoclusters preferentially at the triple grain boundaries as unveiled by …
PbI2 intercalation and residual elimination strategy for sequential ...
2025年1月1日 · RCVB are introduced into PbI 2 to achieve intercalation and residual transformation of PbI 2. RCVB improves perovskite energy level matching, delays …
PbI<sub>2</sub>厚膜的结构、形貌与光谱性质研究 - 百度学术
毫米级厚度碘化铅(PbI2)膜是制造下一代阵列高能辐射探测器的关键材料。 采用近空间升华法制备了PbI2厚膜,研究升华源温度对制备样品晶体结构、表面形貌及光谱性质的影响。
PbI2 nanocrystal growth by atomic layer deposition of Pb
2022年1月17日 · Crystalline PbI2 nanocrystals were grown on soda-lime glass (SLG), silicon dioxide support grids, and silicon wafer substrates and provide the groundwork for further …
Tuning the reactivity of PbI2 film via monolayer Ti3C2Tx MXene …
2021年8月1日 · In this work, two-dimensional (2D) monolayer Ti 3 C 2 T x (T x = O, OH, and F) MXene nanosheets were first introduced into the PbI 2 layer as a multifunctional additive to …
Structural models of CsPbI3, PbI2, and Pb during the Pb …
The lead iodide (PbI2) in lead‐halide perovskite (LHP) is both a positive additive for material properties and a site for the formation of device defects.