2019年4月10日 · PFM enables non-destructive visualization and control of FE nanodomains, as well as direct measurements of the local physical characteristics of ferroelectrics, such as nucleation bias ...

2024年7月28日 · In this study, we fabricated a PZO film with thicknesses varying from 5 to 80 nm. Using Piezoresponse Force Microscopy, we discovered that the film displayed a transition from antiferroelectric behavior in the thicker areas to ferroelectric behavior in the thinner ones, with a critical thickness between 10 and 15 nm.

PZO 作为AFE 的原型材料, 目前普遍认为其具有中心对称Pbam 空间群的正交结构[51,52],常温下PZO 的每个正交晶胞由8 个赝立方单胞组成.晶格常数a,

2023年5月15日 · Combined with aberration-corrected STEM and PFM, we found the periodic nucleation of striping phase was derived from the interface-transferred antipolar modulation provided by the ultrathin PZO spacers, forming the alternate ferroelectric and striping laminas in …

2024年10月22日 · 近日，澳大利亚悉尼大学，加泰罗尼亚纳米科学和纳米技术研究所的刘颖博士后制备了一个厚度范围从5到80 nm，厚度梯度为7.5 nm/mm的PZO薄膜。 不同厚度梯度的PZO薄膜进行研究，80 nm厚的PZO薄膜具有两个反铁电峰，显示出反铁电结构特征，而5 nm厚的PZO薄膜显示这两个反铁电峰靠近并形成了一个峰。 这种结构上的变化可能反映反铁电相向铁电相转变。 相关研究以“Coexistence of ferroelectric and ferrielectric phases in ultrathin antiferroelectric …

2011年8月12日 · PbZrO /SrRuO /SrTiO (100) epitaxial heterostructures with different thickness of the PbZrO (PZO) layer (d ∼ 5–160 nm) were fabricated by pulsed laser deposition. The ultrathin PZO films (d ≤ 10 nm) were found to possess a rhombohedral structure.

2019年1月1日 · PFM is detecting the electromechanical material response when locally biased with a conductive scanning probe microscopy (SPM) tip. The response is based on the inverse piezoelectric effect, which connects the electric field with a change in sample deformation through the piezoelectric coefficient d.

2022年11月21日 · 本文制备了宏观表现为亚铁电特征的锆酸铅（PbZrO3，PZO）薄膜，并用PFM研究了其中亚铁电和反铁电两相的机电响应和分布特征。 结果表明，亚铁电相在低电压时表现出与铁电材料类似的PFM响应，但在高电压下表现出独特的on-field振幅响应。

Achieving ultrahigh energy density at low electric field/voltage, however, remains a challenge for insulating dielectric materials. Taking advantage of the phase transition in antiferroelectric...

O show ferroelectric characteristics, consistent with the PFM measurements in Figures 2 (C) and (D). The GPA in-plane lattice strain map shown in Figure 4(B) suggests a uniform in-plane strain of about 6% and in-plane lattice constant of 0.414 nm in PZO, in contrast with the antiferroelectric or ferrielectric periodic modulations.[14,32] A Fast ...