A 9-10GHz 25W GaN Quasi-MMIC PA in QFN Package Leckey, J.G M/A-COM Technology Solutions, Belfast, N. Ireland. [email protected] Abstract — A single stage X-band (9-10GHz) PA module has been developed using a discrete 0.25um GaN transistor with 4.8mm gate periphery, that incorporates input and output matching

Abstract: This paper presents a quasi-MMIC (q-MMIC) Class-AB power amplifier from 3.4 GHz to 3.8 GHz. The active device is fabricated in a 0.25-µm GaN high electron mobility transistor (HEMT) process, while all passive circuits are fabricated in a high breakdown voltage GaAs integrated passive device (IPD) process.

The proposed quasi-MMIC HPA consists of commercial GaN transistor power cell and IPD matching network using silicon substrate. The proposed quasi-MMIC HPA can achieve similar output power and efficiency characteristics compared with the conventional MMIC HPAs.

2023年8月17日 · In this paper, two high-power high-efficiency broadband GaN quasi-MMIC PAs are introduced. The proposed PAs were fabricated in WIN TM Semiconductors’ 0.25 μm GaN/SiC HEMT technology and GaAs IPD technology. A continuous Class-J mode output matching network was designed to achieve excellent output performance.

The design and implementation of a broadband quasi-monolithic microwave integrated circuit (q-MMIC) power amplifier (PA) is presented for 0.2 to 2.2 GHz applications.

5 天之前 · This article presents a fully integrated 75–100 GHz element-level in-band full-duplex (IBFD) front-end MMIC. The MMIC is implemented in a 40-nm HEMT GaN-on-SiC process and consists of a tunable passive quasi-circulator (PQC), power amplifier (PA), and low noise amplifier (LNA). The tunable passive circulator, consisting of three Lange couplers, uses self-interference cancellation (SIC) for ...

The first internally matched Quasi monolithic microwave intergrated circuits (Quasi-MMIC) single-ended HPA generates a pulsed P out greater than 25 W, G P higher than 9.8 dB, and a...

With the IPDs and GaN HEMT devices, quasi-MMIC high power amplifier(HPA) was designed and fabricated. The HPA shows 16.6 dB small signal gain, 40.5 dBm peak output power at 3.6 GHz. To support the requirements of 5G communications, the HPAs need to have high output power, high linearity, high efficiency, low cost and small form factor. [1] .

2024年5月27日 · This paper proposes an X-band quasi Class-F high power amplifier (HPA) monolithic microwave integrated circuit (MMIC) using DynaFET gallium nitride (GaN) high electron mobility transistor (HEMT) modelling. To enhance efficiency, a novel quasi Class-F output matching circuit is proposed.

The CHZ9012-QFA is an S-Band Quasi-MMIC High Power Amplifier based on GaN power bar and GaAs input and output matching circuits. It is fabricated using UMS 0.25µm GaN on SiC and GaAs MMIC High Power UMS Passive technologies. The CHZ9012-QFA is …