The LMG342xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency. The LMG342xR030 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher

LMG342xR030 GaN FET 具有集成式驱动器和保护功能,可让设计人员在电力电子系统中实现更高水平的功率密度和效率。 LMG342xR030 集成了一个硅驱动器,可实现高达 150 V/ns 的开关速度。 与分立式硅栅极驱动器相比,TI 的集成式精密栅极偏置可实现更高的开关 SOA。 这种集成特性与 TI 的低电感封装技术相结合,可在硬开关电源拓扑中提供干净的开关和超小的振铃。 可调栅极驱动强度允许将压摆率控制在 20 V/ns 至 150 V/ns 之间,这可用于主动控制 EMI 并优化开关性能。 …

Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overtemperature, overcurrent, and UVLO monitoring.

Cyntec(乾坤) RL3720WT-R030-FNH参数名称：阻值：30mΩ；精度：±1%；功率：1W。 下载RL3720WT-R030-FNH中文资料、引脚图、Datasheet数据手册，有贴片电阻详细引脚图及功能的应用电路图电压和使用方法及教程。

Marking: XLMG3422. Part #: XLMG3422R030RQZT. Package: VQFN. Datasheet: 1MbKb/45P. Manufacturer: Texas Instruments. Description: LMG342xR030 600-V 30-m廓 GaN FET With Integrated Driver, Protection, and Temperature Reporting. 3 Results.

RTR030N05HZG Nch 45V 3A Small Signal MOSFET Datasheet VDSS RDS (on) (Max.) ID PD 45V 67mΩ ±3A 1.0W lFeatures 1) Low on-resistance 2) Built-in G.

RRR030P03HZG是低导通电阻MOSFET，适合开关应用。 Loading... 通过引入ROHM工艺方法的 Wettable Flank成型技术，底面电极封装也能形成焊接面。

The LMG352xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency. The LMG352xR030 integrates a silicon driver that enables switching speed up to 150V/ns.

LVK12R030FER由Ohmite设计生产，立创商城现货销售。 LVK12R030FER价格参考￥5.06。 Ohmite LVK12R030FER参数名称：电阻类型：采样电阻；阻值：30mΩ；精度：±1%；功 …

唯样商城为您提供SUSUMU设计生产的RL3720WT-R030-F 元器件,主要参数为：1508 ±1% 30m Ohms 1W 车规-电流传感,RL3720WT-R030-F库存充足，购买享优惠！