RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications. FEATURES High power gain: Pout>16W, Gp>16dB @Vdd=12.5V,f=30MHz APPLICATION For output stage of high power amplifiers in HF band mobile radio sets.

RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications. For output stage of high power amplifiers in HF band mobile radio sets. OUTLINE DRAWING. Note 1: Above parameters are guaranteed independently. MAX. Note : Above parameters , ratings , limits and conditions are subject to change.

RD16HHF1 is a MOS FET transistor specifically designed for HF, RF power amplifiers applications. The RD16HHF1-501 is a power transistor designed and manufactured by Mitsubishi Electric, and it is part of their MOSFET (Metal-Oxide …

rd16hhf1 Overview Mitsubishi Electric’s lineup of High Power Si MOS FET discrete and module products are suitable for frequency ranges from 30MHz to 1GHz and output power levels up to 100W.

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD16HHF1 OUTLINE 3.2±0.4 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.

RD16HHF1 Silicon MOSFET Power Transistor 30MHz,16W RD16HHF1 MITSUBISHI ELECTRIC REV.1 14 May. 2003 1/6 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS DESCRIPTION RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications. FEATURES •High power gain: Pout>16W, Gp>16dB @Vdd=12.5V,f=30MHz

RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications. FEATURES High power gain: Pout>16W, Gp>16dB @Vds=12.5V,f=30MHz Integrated gate protection diode 12.3+/-0.6 3.2+/-0.4 4.8MAX 9+/-0.4 OUTLINE DRAWIN.

The RD16HHF1 from Mitsubishi Electric US, Inc. is a RF Transistor with Frequency DC to 30 MHz, Power 42.04 dBm, Power(W) 16 W, Supply Voltage 12.5 V, Input Power 0.4 W. Tags: Flanged. More details for RD16HHF1 can be seen below.

RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications. FEATURES High power gain: Pout>16W, Gp>16dB @Vdd=12.5V,f=30MHz APPLICATION For output stage of high power amplifiers in HF band mobile radio sets.

Description: RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W. Manufacturer: Mitsubishi Electric Semiconductor.