DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. FEATURES High power gain: Pout>0.8W, Gp>14dB …

RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. For output stage of high power amplifiers in VHF/UHF Band mobile radio sets. …

RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. For output stage of high power amplifiers in VHF/UHF Band mobile radio sets. …

RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. For output stage of high power amplifiers in VHF/UHF Band mobile radio sets. …

Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 1.5+/-0.1 RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.

Part #: RD01MUS1. Description: RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W. File Size: 235.83 Kbytes. Manufacturer: Mitsubishi Electric Semiconductor.

Download the datasheet for RD01MUS1 part from Mitsubishi Electric. Detailed specifications and information are available.

RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W, RD01MUS1_10 Datasheet, RD01MUS1_10 circuit, RD01MUS1_10 data sheet : MITSUBISHI, alldatasheet, Datasheet, …

RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. For output stage of high power amplifiers in VHF/UHF Band mobile radio sets. …

Mitsubishi Electric's RD01MUS1 is a trans rf mosfet n-ch 30v 0.6a 4-pin (3+tab) sot-89. in the fet transistors, rf fets category. Check part details, parametric & specs updated 12-AUG-2023 and …