RD01MUS2 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz, 1W, 7.2V DESCRIPTION RD01MUS2 is a MOS FET type transistor designed for VHF/UHF RF driver …
RD01MUS2 Datasheet(PDF) - Mitsubishi Electric Semiconductor
RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device has an internal monolithic zener diode from gate to source for ESD …
Product Lineup | High Frequency Devices | Mitsubishi Electric
This page introduces the product lineup of GaN high-frequency devices and Silicon RF devices.
RD01MUS2 - MITSUBISHI ELECTRIC US, Inc. Semiconductors and …
rd01mus2 Overview Mitsubishi Electric’s lineup of High Power Si MOS FET discrete and module products are suitable for frequency ranges from 30MHz to 1GHz and output power levels up to …
RD01MUS2 数据表 (PDF) - Mitsubishi Electric Semiconductor
RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device has an internal monolithic zener diode from gate to source for ESD …
RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device have an interal monolithic zener diode from gate to source for ESD …
RD01MUS2 datasheet(1/6 Pages) MITSUBISHI
designed for VHF/UHF RF amplifiers applications. from gate to source for ESD protection. Band mobile radio sets. RD01MUS2-101,T113 is a RoHS compliant products. This product include …
RD01MUS2 Mitsubishi Transistor (NOS) - RF Parts
RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device has an internal monolithic zener diode from gate to source for ESD …
For driver stage of high power amplifiers in VHF/UHF Band mobile radio sets. RD01MUS2B-501, T513 is EU RoHS compliant. This product includes the lead in high melting temperature type …
RD01MUS2 锦美-JMnic_PDF_数据手册_Datasheet_规格书_锦美 …
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