2018年9月12日 · This chapter reviews the property of GaN material, the advantage of GaN-based SBD, and the Schottky contact to GaN including current transporation theory, Schottky material selection, contact quality and thermal stability.

2019年5月24日 · This paper reviews the recent progress of vertical GaN SBD from literatures. The following aspects are covered; the device characteristics of GaN-based SBD in Section 2, terminal edge techniques in Section 3, the typical fabrication flow of vertical GaN SBD in Section 4, and the conclusion in Section 5.

The AlGaN/GaN PCT-SBD shows good potential in integrating with GaN-based power devices for temperature sensor applications. This article presents a temperature sensor based on a partial p-GaN cap layer and a semicircular T-anode AlGaN/gallium …

This article reports a low ON-resistance fully-vertical GaN-on-SiC Schottky barrier diode (SBD) featuring a highly conductive buffer structure between the GaN drift layer and SiC substrate.

2023年12月4日 · Starting from the three basic structures, this paper analyses and summarizes the research progress of GaN SBD (schottky barrier diode) in recent years. The design and optimization methods of GaN-based SBD are introduced from various aspects, such as anode structure, termination type, epitaxial structure and substrate.

AlGaN/GaN SBD最基本的工作原理是利用金属-半导体肖特基接触的单向导电性，金属与AlGaN/GaN接触时，在金属一侧形成势垒qΦ b ，在半导体一侧的势垒高度为qV bi ，AlGaN/GaN SBD的能带结构图6所示。与普通体材料不同的是，在AlGaN/GaN异质结界面处，由于AlGaN与GaN禁带宽度 ...

A compact scalable large signal model for GaN Schottky diodes for multicathode application is proposed in this article. The scalable rules for extrinsic and intrinsic model parameters are given in detail.

2024年4月7日 · 开发紧凑可扩展的大信号模型：针对GaN（氮化镓）肖特基势垒二极管（SBD）在多阴极应用中的需求，作者提出了一个结构紧凑且具有 可扩展性 的大型信号模型。 这一模型设计旨在适应不同的阴极数目，并保持模型的准确性和适用性。 定义可扩展参数规则：详细阐述了外在（extrinsic）和内在（intrinsic）模型参数的可扩展规则。 这些规则确保了当二极管的阴极数目发生变化时，相关参数能够按照一定的规律进行调整，从而维持模型的有效性和一致性。 模型性 …

本工作从分析肖特基势垒的耗尽机制出发设计制备了双势垒阳极结构AlGaN/GaN SBD，研究者提出了由具有高功函数（铂Pt，5.65 eV）和低功函数（钽Ta，4.25 eV）组成的双势垒阳极（DBA）结构⁶。

2019年5月24日 · Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper...