Tensile creep and fatigue behaviors of SiC/SiC ... - ScienceDirect
Tensile creep and sustained-peak low-cycle fatigue (SPLCF) tests were conducted in sequence on SiC-fiber-reinforced SiC matrix (SiC/SiC) composites under thermal gradient (TG) …
Single-Event Burnout Hardness for the 4H-SiC Trench-Gate MOSFETs Based ...
In this article, the performance and triggering mechanism of the single-event burnout (SEB) of a 4H-SiC trench-gate (TG) MOSFET structure are evaluated by the 2
TGA-DSC analysis of silicon carbide: (a) TG-DTG curves, (b) TG …
Pure beta silicon carbide of submicron and micron particle size has been synthesized via carbothermal reduction of nanosilica. The resulted powder and its carbon-silica precursor were …
Fabrication of SiC ceramic architectures using stereolithography ...
2019年8月1日 · In this study, 3D structured SiC ceramic architectures were fabricated by stereolithography based additive manufacturing combined with precursor infiltration and …
Review on the Reliability Mechanisms of SiC Power MOSFETs: A …
The latest studies focusing on the reliability issues of commercial SiC mosfet products, including the PG device, the double-trench device and the asymmetric TG device, are reviewed. For the …
High-Temperature Encapsulation Materials for Power ... - IEEE Xplore
Abstract: The applications of wide bandgap (WBG) semiconductors represented by silicon carbide (SiC) and gallium nitride (GaN) in power modules are currently limited by the thermal stability …
一种商品碳化硅中C及SiC含量的测定方法-专利-万方数据知识服务 …
1.一种商品碳化硅中C及SiC含量的测定方法，其特征在于，包括：将待测的所述商品碳化硅以设定的温度曲线在氧气气氛条件下测得TG曲线，所述TG曲线中连续失重段所算得的质量损失作为 …
SiC功率MOSFET可靠性机制综述：平面栅极与沟槽栅极结构的比 …
2023年4月10日 · 为了阐明当前的研究现状并更好地理解碳化硅（SiC）功率金属氧化物半导体场效应晶体管（MOSFET）的可靠性，对平面栅极（PG）和沟槽栅极之间的可靠性机制进行了比 …
具有集成异质结二极管以增强性能的 SiC 沟槽 MOSFET 的数值演示
2023年4月26日 · 在本文中，根据 TCAD 仿真，提出并研究了一种新型的集成异质结二极管的 SiC 沟槽栅 MOSFET (HD-TG-MOS)。 n型多晶硅/n型SiC HD通过多晶硅和半导体之间的直接接触 …
Schematic representation of oxidation of SiC in the TGA
Download scientific diagram | Schematic representation of oxidation of SiC in the TGA from publication: Diffusional effects for the oxidation of SiC powders in thermogravimetric analysis ...