2001年6月1日 · Accurate X-ray powder diffraction (XRD) analysis of SiC-based ceramics is a difficult task due to the significant overlap of the Bragg reflections from the different SiC polytypes. For this reason, results obtained by traditional XRD methods are, in general, unsatisfactory.

To provide experimental evidence of this structural feature, synchrotron X‐ray sources are used to obtain X‐ray diffraction (XRD) patterns of polyhedral cuprous oxide crystals.

The particle size, the stability of suspensions, phase composition, and microstructure of Cu powders were characterized by laser particle size analyzer, zeta potential, X-ray diffraction (XRD ...

1999年5月5日 · The XRD data proved a dominant 3C-SiC structure accompanied by an admixture of the residual 6H-SiC phase. The main core-level photoelectron spectra were analysed in detail. In particular, the C 1s level spectrum revealed a three peaks structure containing the peak indicative of free carbon as well as the remaining two identified as the carbidic ...

Highly-oriented polycrystal 3C-SiC bulks were ultra-fast fabricated via halide chemical vapor deposition (CVD) using tetrachlorosilane (SiCl4) and methane (CH4) as precursors. The effects of...

2015年3月1日 · 上外延了3C—SiC薄膜，利用XRD研究了生长温度、晶格失配、碳化等实验条件对薄膜 取向、应力以及结晶品质的影响；廖燕平等人‘91制备了激光晶化多晶硅薄膜，研究了

simulation results to the XRD data indicates that the B-SiC particles consist either of heavily faulted clusters distrib­ uted irregularly between regions that have only occasional

2022年9月8日 · In situ X-ray crystallography powder diffraction studies on beta silicon carbide (3C-SiC) in the temperature range 25–800 °C at the maximum peak (111) are reported. At 25 °C, it was found that the lattice parameter is 4.596 Å, and coefficient thermal expansion (CTE) is 2.4 × …

Cubic silicon carbide (3C-SiC) has superior mobility and thermal conduction over that of widely applied hexagonal 4H-SiC. Moreover, much lower concentration of interfacial traps between insulating oxide gate and 3C-SiC helps fabricate reliable and long-life devices like metal-oxide-semiconductor field effect transistors.

2001年6月1日 · Accurate X-ray powder diffraction (XRD) analysis of SiC-based ceramics is a difficult task due to the significant overlap of the Bragg reflections from the different SiC polytypes. For this reason, results obtained by traditional XRD methods are, in general, unsatisfactory.