XPS scan on a-Si coupon after SiF4/O2 plasma exposure at −40 …
This article first presents quasi- in situ XPS measurements on Si 3 N 4 and a-Si samples after exposure to an SiF 4 /O 2 plasma at different cryogenic temperatures.
Quasi In Situ XPS on a SiOxFy Layer Deposited on Silicon
2022年1月27日 · In order to have a better understanding of the mechanisms involved in the growth of the SiO x F y layer and its desorption, quasi in situ XPS measurements have been performed and are presented in this paper. The silicon oxyfluoride layer was deposited at three different temperatures between −100 °C and −40 °C using SiF 4 /O 2 plasma.
In situ XPS analysis of the electronic structure of silicon and ...
2021年3月15日 · In this study, we focus on reducing the amount of carbon from UHV chamber inside surfaces via silicon and titanium coatings using a low-pressure inductively-coupled downstream plasma source and we characterize the surface alterations by in situ X-ray photoemission spectroscopy (XPS).
In situ XPS spectra of Si sample after an overpassivating SF 6
Brillouin scattering and x-ray photoelectron spectroscopy (XPS) have been utilized to characterize Ge + -implanted thermal SiO 2 layers on a Si substrate with subsequent annealing at 500 ° C and...
硅 | Thermo Fisher Scientific - CN
XPS 谱图解读. Si2p 峰具有间隔很小的自旋轨道分裂峰 (Δ=0.63eV) 通常只需要考虑单质 Si。 硅化合物的 Si2p 峰分裂可忽略。 观察到两个不同的对称峰（在低通能下）或单个不对称峰（在较高通能下）。
通过低温工艺沉积在硅上的 SiOxFy 层上的准原位 XPS,ECS Journal …
2022年1月27日 · 使用SiF 4 /O 2等离子体在-100°C和-40°C之间的不同温度下将氟氧化硅层沉积在a-Si样品上。 然后进行原位 X 射线光电子能谱测量以表征沉积层。 然后将样品恢复至室温并再次分析。
XPS spectra of the SiN thin films: (a) Si 2p peaks, and (b) N 1s peaks.
Silicon nitride thin films were deposited by the atomic layer deposition (ALD) technique in a batch-type reactor by alternating exposures of a Si precursor and NH3. SiCl4 and SiH2Cl2 were examined...
In 32, SiF 4 / O 2 plasma mixture has been produced and studied to evidence the importance of SiF x physisorption in the formation of the SiO xF y layer. It was also shown by Spectroscopic Ellipsometry (SE) measurements that, for the same plasma parameters, the thickness of the deposited layer increases when the sample temperature decreases.
cryogenic temperature to room temperature. An in situ x-ray photoelectron spectroscopy XPS device is used in order to probe the top-surface layer and understand the desorption mechanism. A new mechanism can be proposed using the evolution of fluorine, oxygen, silicon, and carbon contributions evidenced by XPS. © 2009 American Institute of ...
XPS characterization and optical properties of Si/SiO
1998年7月18日 · X-ray photoelectron spectroscopic (XPS) analysis of these films revealed that the main low valency Si state was SiO x (0<x <2) for Si/SiO 2, and Si for Si/Al 2 O 3 and Si/MgO under the same preparation conditions.
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