
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).
Exposure to absolute maximum rating conditions for extended periods may affect device reliability. a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used.
FDS9933 Datasheet (PDF) - Fairchild Semiconductor
Description: Dual P-Channel 2.5V Specified PowerTrench MOSFET. Manufacturer: Fairchild Semiconductor.
9933B Datasheet, PDF - Alldatasheet
Description: Dual P-Channel 2.5V Specified PowerTrench짰 MOSFET. 8 Results. Part #: MAX9933BGUA+T. Datasheet: 1MbKb/16P. Manufacturer: Maxim Integrated Products.
FDS9933A Datasheet, PDF - Alldatasheet
Description: Dual N-Channel 2.5V Specified PowerTrench MOSFET. 2 Results. Part #: FDS9933A-NL. Datasheet: 1MbKb/9P. Manufacturer: VBsemi Electronics Co.,Ltd.
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FDS9933 onsemi - 20V 5A 2W 90mΩ@2.5V,1A 600mV 2 P-Channel SOIC-8 MOSFETs MOSFETs. Check out the in-stock pricing and datasheet for electronic components from LCSC Electronics.
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SI9933CDY-T1-GE3 Vishay SMD power MOSFETs, SO8 housing
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SI9933CDY-T1-GE3 VISHAY - Transfer Multisort Elektronik
VISHAY SI9933CDY-T1-GE3 | Transistor: P-MOSFET; unipolar; -20V; -4A; 2W; SO8 - This product is available in Transfer Multisort Elektronik. Check out our wide range of products.