
Strain-engineered inverse charge-funnelling in layered ... - Nature
2018年4月25日 · Hence, we employed scanning photocurrent microscopy (SPCM) mapping 25, 26 to study the photoresponse of a strain-engineered HfS 2 photodetector in a field-effect transistor (FET) configuration in...
Spatially Resolved Photoexcited Charge-Carrier Dynamics in Phase ...
Optical, reflection, and PL images for determination of device positions, SPCM on short channel length devices, amplitude and phase information extracted from SPCM maps, bias-dependent SPCM maps of a 2H-contacted device, reproducibility of bias-dependent SPCM maps of a 1T-contacted device, fixed position photocurrent microscopy of a 1T ...
单光子计数模块 - Excelitas | DigiKey
Excelitas 的单光子计数模块 (SPCM) 系列是一种自足式模块,满足共聚焦显微镜、荧光、发光和时间相关单光子计数器 (TCSPC) 的低光度光子分析检测需要。
Using a combination of scanning photocurrent microscopy (SPCM) along with scanning thermal microscopy (SThM) we demonstrate that substrate engineering is a powerful way to build a thermoelectric...
Distinct junction transformations of pixel-arrayed long-wavelength ...
2022年9月1日 · The SPCM method is used to characterize the PN junction performance of long-wavelength Hg 0.78 Cd 0.22 Te array detectors. It is found that the long-wavelength device transformed from n-on-p structure to n-on-n − structure at about 175 K, and further turns into an n − -on-n-on-n − structure with the temperature increasing.
InSe Schottky Diodes Based on Van Der Waals Contacts
2020年5月4日 · Using information from the I–V s and the SPCM maps of the Schottky diodes we propose a schematic band structure of the devices under investigation. Figure 3a shows the band structure of the symmetric Au–InSe–Au device at zero external voltage (black curve) and with positive (FV) and negative voltage (RV).
All-Printed Ultrahigh-Responsivity MoS - Wiley Online Library
2022年7月5日 · SPCM (wavelength λ = 630 nm, spot size = 1.54 μm) shows that the photoresponse in the all-printed photodetectors primarily arises from the MoS 2 channel rather than the graphene electrodes (Figure 3a–c). The location of the MoS 2 and graphene regions are corroborated by Raman mapping (Figure S9, Supporting Information).
SCANNING PHOTOCURRENT MICROSCOPY IN SEMICONDUCTOR …
Raster-scanned laser excitation generates a position-dependent photocurrent map from which carrier diffusion length, electric field distribution, doping concentration and more can be explored. In this review, we will briefly discuss the history of the technique, the theory behind locally injected carrier transport in
H2 evolution at Si-based metal–insulator–semiconductor ... - Nature
2013年5月5日 · Spatial variation of the PEC activity was further investigated by combining SPCM with scanning electrochemical microscopy (SECM), which can be used to map H 2 evolution rates across an...
(a) AFM image of one of the studied devices. Scale bar is 2 µm.
(b) SPCM map. The photocurrent (linear colorscale) is collected simultaneously with the intensity of the reflected light, which is used to detect the contour of the electrodes (solid black lines).