华东师范大学吴幸教授、新加坡科技与设计大学Kin-Leong Pey教授等：先进Si…
近年来，出现了几种测量应变的tem技术，以cebd、nbed、ped、dfeh、高分辨率tem（hrtem）和带gpa的 高分辨率扫描tem （hrstem）为代表，这些技术最适合分析纳米器件中的应变。
Atomic‐scale strain analysis for advanced Si/SiGe heterostructure …
Three-dimensional stacked transistors based on Si/SiGe heterojunction are a potential candidate for future low-power and high-performance computing in integrated circuits. Observing and …
正确选择透射电镜的不同模式——TEM,HRTEM,HAADF-STEM - 知乎
2023年10月8日 · 几乎任何与材料相关的领域都要用到 透射电镜，而最常用的三大透射电镜是：普通透射电子显微镜（TEM）、 高分辨透射电子显微镜 （HRTEM）和扫描透射电子显微镜 …
Laser-assisted formation of 3c-SiC and continuous diamond
2023年12月26日 · In this paper, we present an alternative processing approach to form thin film 3c-SiC directly on Si (100) using a non-equilibrium route based on liquid phase quenching of …
HAADF-STEM block-scanning strategy for local ... - ScienceDirect
2020年12月1日 · High resolution scanning transmission electron microscopy (HR-STEM) imaging is an excellent tool that provides spatial resolution at the atomic scale and strain information by …
Quantitative HAADF STEM of SiGe in presence of amorphous surface layers ...
2018年1月1日 · The chemical composition of four Si 1 − x Ge x layers grown on silicon was determined from quantitative scanning transmission electron microscopy (STEM). The …
Modeling Si/SiGe quantum dot variability induced by interface …
2024年3月27日 · By convolving data from scanning tunneling microscopy and high-angle annular dark field scanning transmission electron microscopy, we reconstruct 3D interfacial atomic …
HRSTEM HAADF image of the dumbbell SiGe/Si interface.
The atomic structure of a SiGe/Si epitaxial interface grown via molecular beam epitaxy on a single crystal silicon substrate was investigated using an aberration-corrected scanning transmittance...
HRSTEM Imaging with Uncorrected Thermo Scientific TEMs High-resolution scanning transmission electron microscopy (HRSTEM) is a highly valuable technique across a wide …
Enhancing and mapping thermal boundary conductance across bonded Si …
2025年2月15日 · Raman spectroscopy and HRSTEM were used to investigate the stress/strain of the Si device layer on the SiC substrate. The TBC and its spatial distribution across the …