2016年7月22日 · In situ TEM compression experiment demonstrated a direct amorphization process from the single crystalline diamond cubic Si phase, owing to the accumulation of plastic strain and profuse...

An overview of the characterization of strain in Si/SiGe heterojunction for 3D stacked transistors by TEM with diffraction and imaging methods is presented in this paper, with evaluation in terms of criteria including spatial resolution, strain precision, field of …

2016年8月30日 · In this work, we study the lithiation behaviours of both porous silicon (Si) nanoparticles and porous Si nanowires by in situ and ex situ transmission electron microscopy (TEM) and compare...

通过高分辨TEM和EDS解析了FinFET结构，由图3-4可知，Si Fin的高分辨TEM图像并未发现明显的电子束损伤迹象，各膜层界线清晰度良好，单晶Si原子成周期性晶格排布，氧化铪层的晶格也清晰可见。以上可说明此次样品制备的厚度适中，TEM图像没有像散和畸变，TEM拍照 ...

In this report we demonstrate the successful 80kV alignment of a double aberration corrected TEM/STEM (JEM-Z3100F-R005) equipped with a cold field emission gun designed to operate at 300kV. In...

Voyles et al [1] analyzed Sb (antimony) doped Si (silicon) in the <110> zone-axis orientation using ADF-STEM (annular dark-field scanning transmission electron microscopy) operated at 200 kV, directly observed individual Sb atoms at atomic-resolution, and identified the Sb clusters in Si responsible for the saturation of charge carriers.

We demonstrated a novel, simple, and low-cost method to fabricate silicon nanowire (SiNW) arrays and silicon nanohole (SiNH) arrays based on thin silver (Ag) film dewetting process combined with...

2016年7月1日 · Before and after neutron irradiation, in order to identify the “adhesion” in silica nanoparticles, analyses have been conducted on transmission electron microscope (TEM) at small nano dimensions. Simultaneously, at relatively larger nano dimensions, the surfaces of the samples were observed by the scanning electron microscope (SEM).

2016年1月15日 · Transmission electron microscopy (TEM), X-ray diffraction (XRD) were employed to investigate the atomic structure of Si/SiC heterojunction. 2. Experimental. The Si/SiC heterojunctions were prepared on 6H-SiC (0001) substrates by LPCVD.

2006年1月30日 · Abstract: We have performed direct observations and elemental analyses of SiO 2 /Si (100) and La 2 O 3 /Si (100) by spherical aberration-corrected transmission electron microscopy (TEM) / scanning TEM (STEM) and “combinatorial analyses” by energy dispersive X-ray analysis (EDX) and electron energy loss spectroscopy (EELS).