2023年1月1日 · High-thermal-conductivity composites with silicon nitride (Si3 N 4) as the matrix and diamond particles as the reinforcing phase were successfully developed. Si 3 N 4/diamond composites offered maximum thermal conductivity of 201.96 W·m−1 ·K −1, an increase of 272.87 % compared with Si 3 N 4.

2023年12月15日 · Based on these advantages, Si3 N 4 features broad application prospects in manufacturing high-temperature gas/liquid filters, wave-transmitting materials (e.g. missile radomes and windows), crucibles, combustors, aluminum electrolytic cell linings, catalyst carriers, thermocouple wells for temperature measurement, engineering components, ceramic...

Abstract: Silicon nitride Si3N4 windows have been widely used in nanofluidic cells for liquid Transmission Electron Microscopy (TEM) because of their stability and good imaging properties. However, the pressure difference between the fluid in the liquid cell and the exterior vacuum required for TEM, generates bulging of the window.

As the strain increased from 67% to 167%, the mean grain diameter of Si3N4 with MgSiN2 as an additive increased by 49%, reaching 1.36 ± .6 µm. The addition of MgSiN2–Y2O3 resulted in a...

利用TEM,STM和PDS显微光度计研究了ECR-PECVD技术制备的Si3N4薄膜的微结构.结果表明：在较低沉积温度下，ECR-PECVD制备的Si3N4薄膜是一种纳米α-Si3N4薄膜，其晶粒粒度在14—29nm间，而且这种薄膜具有较好的表面平整度.初步分析了ECR-PECVD制备的Si3N4在较低沉积温度下形成晶态薄膜的机理. The microstructure of silicon nitride thin film prepared by ECR-PECVD is studied by transmission electron microscopy (TEM), scanning tunnel microscopy …

本实验使用避射电镜(TEM)对Si_3N_4陶瓷材料的显微结构(晶粒,晶界,位错)及烧结机理进行了研究.利用明场像,暗场像及晶界相产生的漫散晕轮证明晶界相是以玻璃态形式存在,从而说明是液相烧结,并用实验证明致密化过程是:α—Si_3N_4在液相中溶解——扩散——再沉淀 ...

Si 3 N 4 ceramic was joined to itself using a filler alloy of (CuZn)85Ti15 at 1123–1323 K for 15 min. TEM observation showed that a reaction zone of TiN and/or Ti 2 N exists at the interface between the ceramic and filler alloy, and the center of the joint is composed of Cu-Zn solid solution in which there are Cu 2 TiZn and Ti 5 Si 3 reaction ...

2012年11月1日 · 摘要 用 120–720 keV C60+,2+ 离子照射非晶 Si3N4（厚度 20 nm）薄膜，并使用透射电子显微镜（TEM）观察。 通过 TEM 直接观察到在无定形材料中产生的离子轨迹。

Cross-sectional TEM images show that an RF power of 350 W induced some damage to the Si (111) surface. The thickness of nitrided Si3N4 was measured to be about 5–7 nm. XPS results shown that...

The nanoneedles show a α‐Si3N4@SiOx core‐shell heterostructure as characterized by TEM, with single crystalline α‐Si3N4 core and an insulating amorphous silicon oxide shell.