2001年7月1日 · The reliability of AFM grown SiO 2 as a gate oxide needs to be examined if nanodevices fabricated from the oxide are to be integrated into standard microelectronic technology. In this article we present our preliminary results on AFM fabrication and topographical characterisation of large area oxide, electrical characterisation is to follow.

2001年6月1日 · In order to establish whether atomic force microscope (AFM) grown SiO 2 is appropriate for use as a gate oxide in nanoelectronics, a characterization of these films needs to be performed. In this paper results on AFM fabrication and topographical characterization of large-area SiO 2 patterns are presented.

In this paper, we study the optical properties, the surface roughness and the topography of Si and SiO2 substrates-coated with PMMA film layer using UV-Vis-NIR Spectrometer and atomic force ...

1999年8月1日 · The objectives of this research were to compare the effects of these surface treatments on glass and quartz using AFM, surface roughness and contact angle measurements, and a novel SAW sensor technique which measures water adsorption at temperatures slightly above the dewpoint.

2001年5月25日 · 为了确定原子力显微镜 (afm) 生长的 sio2 是否适合用作纳米电子学中的栅极氧化物，需要对这些薄膜进行表征。在本文中，介绍了大面积 sio2 图案的 afm 制造和地形表征的结果。

1998年11月23日 · In this work, we demonstrate the applicability of conducting atomic force microscopy (AFM) for the quantitative electrical characterization of thin (3–40 nm) SiO 2 films on a nanometer scale length.

2001年7月1日 · 摘要 如果将由氧化物制成的纳米器件集成到标准微电子技术中，则需要检查 afm 生长的 sio 2 作为栅极氧化物的可靠性。 在本文中，我们展示了我们在大面积氧化物的 AFM 制造和形貌表征方面的初步结果，接下来是电气表征。

This study investigates an advanced copper (Cu) chemical displacement technique (CDT) with varying the chemical displacement time for fabricating Cu/SiO2-stacked resistive random-access memory ...

2001年7月1日 · Atomic force microscope (AFM) and conductive AFM tests show that the surface of the SiO2 thin films, with different O2 plasma powers, is relatively smooth and the films all present...

2001年7月1日 · The reliability of AFM grown SiO 2 as a gate oxide needs to be examined if nanodevices fabricated from the oxide are to be integrated into standard microelectronic technology. In this article we present our preliminary results on AFM fabrication and topographical characterisation of large area oxide, electrical characterisation is to follow.