2024年1月4日 · We report the deposition and patterning of silicon dioxide (SiO 2) films of high electrical and optical quality on Si (100) or polymer substrates in a N 2 atmosphere and at 300 K by the photochemical conversion of thin liquid tetraethoxysilane (TEOS) layers with narrowband vacuum ultraviolet radiation [vacuum ultraviolet (VUV), 172 nm] provided ...

2001年7月6日 · In this work, low temperature Xe2* excimer lamp photochemical vapor deposition (photo-CVD) of SiO2 is performed using SiH4 with three oxidant systems: O2, H2O/O2, and H2O2. While SiH4/O2 mixtures have been previously investigated, the H2O/O2- and H2O2-based chemistries are new.

VUV light with λ < 190–200 nm is able to break Si-CH 3 bonds and to make low-k materials hydrophilic. The following moisture adsorption degrades the low-k properties and reliability. This fact motivated research into the mechanisms of UV/VUV photon interactions in pSiCOH films and in other materials used in BEOL nanofabrication.

2017年10月17日 · We herein report the photon-induced fabrication of microporous SiO 2 membranes that can selectively restrict passage of O 2 and larger hydrated ions while allowing penetration of protons, water, and H 2.

1999年8月1日 · Silica film coatings were demonstrated using photo-chemical vapor deposition with a 172-nm Xe excimer lamp. Tetraethoxyorthosilicate (TEOS) molecules were successfully dissociated into SiO 2 +2C 2 H 5 -OH+ (residual C and H) with the 7.2-eV photons.

1995年2月1日 · Silicon dioxide ( SiO 2) films have been successfully deposited on indium phosphide (InP) substrate at low temperature and low pressure by direct photo-enhanced chemical vapor deposition (photo-CVD) under irradiation by a deuterium lamp. Silane ( SiH 4) and oxygen ( O 2) are used as reactant sources.

1997年12月1日 · A transparent SiO2 thin film was grown with Xe2* excimer lamp and NF3, O2 mixed gases at room temperature. Unlike the conventional methods such as atomic layer epitaxy (ALE) at low temperature, this method requires only a …

2011年1月1日 · Silica film coatings were demonstrated using photo-chemical vapor deposition with a 172-nm Xe excimer lamp. Tetraethoxyorthosilicate (TEOS) molecules were successfully dissociated into...

2011年2月10日 · The results of the film characterization were a SiO2 film thickness of about 1500Å, a refractive index of 1.38, specific resistance of 1.67*1010 Ω cm and relative dielectric constant of 6.96. SiO2 insulator was fabricated by using Xe2* excimer lamp at room temperature.

2019年1月1日 · We present a comparative analysis of Cathodoluminescence (CL), Photoluminescence (PL) and Electroluminescence (EL) spectra measured on Si-SiO2 structures with various thicknesses of SiO 2 layer. The spectral distributions of the luminescence depend on the technology of the SiO 2 layer formation, on its thickness and the type of excitation.