2017年11月1日 · As confirmed by FEM/RSM simulations, in this configuration, the SiGe diffraction pattern is an image of the heterogeneous strain field in the length of the Source/Drain. The …

2005年12月5日 · Reciprocal space maps (RSMs) allowed us to determine non-destructively the precise composition (∼1%) and strain of the Ge channel, along with similar information …

2022年6月10日 · Here we report synchrotron x-ray diffraction-based non-destructive nanoscale mapping of Si/SiGe nanosheets for gate-all-around structures. We identified two competing …

2005年2月1日 · The application of Raman spectroscopy and spectroscopic ellipsometry (SE) for characterization of strained silicon layers on SiGe virtual substrates is demonstrated. X-ray …

2024年1月10日 · RSM是直观的分析薄膜与衬底失配关系以及薄膜缺陷的方法。 传统的HRXRD上收集一张RSM需要几个甚至几十个小时。 现实中往往由于机时的限制，很难得到RSM。 现 …

2023年4月8日 · The SiGe/Si super-lattice-like heterostructure induces an intrinsic strain effect on the high-mobility SiGe layer, resulting in even higher carrier mobility than traditional Si …

In this study, we investigated the strain behavior of the oxidized SiGe layers and the evolution of the film morphology. The thermal anneal-ing relaxation was measured by high-resolution X-ray …

2019年7月2日 · The novel three-layer graded SiGe strain relaxed buffer, whose Ge concentration increased from bottom to top by roughly 10% with an in situ annealing after each layer grown, …

本研究工作通过分子束外延生长了高质量非掺杂型Si/SiGe异质结并测试了二维电子气迁移率. 球差电镜观察到原子级尖锐界面, 原子力显微镜表征显示其表面均方根粗糙度仅为0.44 nm, 低温下 …

2001年7月1日 · Relaxation of thin SiGe layers (∼90nm) grown by molecular beam epitaxy using a low temperature growth step (120–200°C) has been investigated using two-dimensional …