The thickness and composition determination of Silicon-Germanium (SiGe) films have been demonstrated using simultaneous X-ray Photoelectron (XPS) and X-ray Fluorescence (XRF) measurements. Measurements of SiGe films in various applications were explored.

2020年3月1日 · In this study, the compositions of ultrathin oxides (<1.2 nm) formed by oxidizing SiGe surface are characterized using X-ray photoelectron spectroscopy (XPS) technology as a function of ozone oxidation processing conditions. It is found that the oxide composition is very sensitive to ozone partial pressure.

2017年11月1日 · In this paper, X Ray Photoelectron Spectroscopy (XPS) has been used to characterize the SiGe channel layer. XPS is a well-established method for the analysis of ultrathin films thanks to its surface sensitivity (<100 Å) and its …

We report the results of investigation of the thermopower (Seebeck effect) of a ThCr2Si2-structured heavy fermion single-crystalline YbPd2Si2 compound (itterbium-palladium-silicon, 1-2-2) under...

2024年1月1日 · In this study, we compare the robustness of optical constants and optical band gap determination of three different materials: SiGe, N-doped HfO 2 and MoO x, using the combination of two techniques: spectroscopic ellipsometry, and energy loss signal (ELS) of X-ray photoelectron spectroscopy (XPS).

2023年2月23日 · We investigated 1-D and 2-D chemical depth mapping using SIMS, XPS and TEM-EDX. For strain/lattice spacing engineering effects, we used XRD and Raman analysis for Ge, Sn and C implantation into Si and SiGe wafers followed by RTA or laser melt annealing to form surface thin layers of SiGe, SiGeSn and SiGeC.

2023年12月28日 · 研究发现Ge含量增加导致SiGe的蚀刻速率上升，通过XPS分析揭示了Ge富集现象的原因，包括SiGe合金中Ge的挥发性和表面氧化的影响。 引言. 近年来，硅/硅锗异质结构已成为新型电子和 光电器件 的热门课题。 因此，人们对硅/硅锗体系的结构制造和输运研究有相当大的兴趣。 在定义Si/SiGe中的不同器件时，反应离子刻蚀法（RIE）在图案转移过程中起着重要的作用。 这种制造过程通常需要与埋着的SiGe薄膜接触。 与这些埋地区域接触需要蚀刻硅并在薄薄 …

2014年5月1日 · The thickness and composition determination of Silicon-Germanium (SiGe) films have been demonstrated using simultaneous X-ray Photoelectron (XPS) and X-ray Fluorescence (XRF) measurements....

The DOE consists of 17 wafers with 6 different SiGe thickness splits over a wide range, and 4 composition splits with less than 5%AC apart. The objective was to investigate the sensitivity of the XPS-XRF measurement on SiGe, its applicability over much thicker film which is greater than 150Å, as well as test the validity of the film analysis ...

在本研究中，我们结合两种技术：光谱椭圆光度法和能量损失信号 (ELS)，比较了三种不同材料：SiGe、N 掺杂 HfO 2和 MoO x的光学常数和光学带隙测定的鲁棒性。